SOT23 PNP SILICON POWER (SWITCHING) TRANSISTOR

FEATURES * 625mW POWER DISSIPATION * IC CONT 2.5A * IC Up To 10A Peak Pulse Current * Excellent hfe Characteristics Up To 10A (pulsed) * Extremely Low Saturation Voltage E.g. 10mV Typ. * Exhibits extremely low equivalent on-resistance; RCE(sat)

文件：183 Kbytes 页数：7 Pages

DIODES

美台半导体

SOT23 PNP SILICON POWER (SWITCHING) TRANSISTORS

Features • BVCEO > -100V • IC = -1A High Continuous Collector Current • ICM= -2.5A Peak Pulse Current • Low Saturation Voltage VCE(sat)

文件：367.43 Kbytes 页数：4 Pages

DIODES

美台半导体

Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 20V 1.5A SOT23-3

PAM

龙鼎微

SOT23 PNP SILICON POWER (SWITCHING) TRANSISTOR

FEATURES * 625mW POWER DISSIPATION * IC CONT 2.5A * IC Up To 10A Peak Pulse Current * Excellent hfe Characteristics Up To 10A (pulsed) * Extremely Low Saturation Voltage E.g. 10mV Typ. * Exhibits extremely low equivalent on-resistance; RCE(sat)

文件：183 Kbytes 页数：7 Pages

DIODES

美台半导体

PNP SILICON PLANAR HIGH GAIN MEDIUM POWER TRANSISTOR

FEATURES Very low equivalent on-resistance; RCE(sat)=210mΩ at 1.5A

文件：63.45 Kbytes 页数：3 Pages

Zetex

Medium Power Transistor

Features ● Very low equivalent on-resistance;RCE(sat)=210mÙ at 1.5A.

文件：37.24 Kbytes 页数：2 Pages

KEXIN

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