15V NPN LOW SATURATION TRANSISTOR IN SOT23

Features • BVCEO > 15V • IC = 3A high Continuous Collector Current • ICM = 12A Peak Pulse Current • RCE(sat) = 50mΩ for a low equivalent On-Resistance • 625mW Power dissipation • hFE specified up to 12A for high current gain hold up • Complementary PNP Type: FMMT717 • Totally Lead-Free &am

文件：951.64 Kbytes 页数：7 Pages

DIODES

美台半导体

Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 15V 3A SOT23-3

DIODES

美台半导体

4-Pin Phototransistor Optocouplers

Description The FOD814 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a silicon phototransistor output in a 4-pin dual in-line package. The FOD617/817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor

文件：578.17 Kbytes 页数：12 Pages

FAIRCHILD

仙童半导体

4-Pin High Operating Temperature Phototransistor Optocouplers

文件：583.93 Kbytes 页数：12 Pages

FAIRCHILD

仙童半导体

4-Pin Phototransistor Optocouplers

Description The FOD814 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a silicon phototransistor output in a 4-pin dual in-line package. The FOD617/817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor

文件：578.17 Kbytes 页数：12 Pages

FAIRCHILD

仙童半导体