丝印：624；Package：SOT-23；NPN SILICON POWER (SWITCHING) TRANSISTORS

FEATURES * 625mW POWER DISSIPATION * IC CONT 3A * 12A Peak Pulse Current * Excellent HFE Characteristics Up To 12A (pulsed) * Extremely Low Saturation Voltage E.g. 8mV Typ. * Extremely Low Equivalent On Resistance; RCE(sat)

文件：308.81 Kbytes 页数：4 Pages

Zetex

丝印：624；Package：SOT-23；SOT23 NPN SILICON POWER

Features • BVCEO > 15V • IC = 3A high Continuous Collector Current • ICM = 12A Peak Pulse Current • RCE(sat) = 50mΩ for a low equivalent On-Resistance • 625mW Power dissipation • hFE specified up to 12A for high current gain hold up • Complementary PNP Type: FMMT717 • Totally Lead-Free &am

文件：307.8 Kbytes 页数：4 Pages

DIODES

美台半导体

150V NPN SILICON LOW SATURATION TRANSISTOR IN SOT-23

Features • BVCEO > 125V • IC = 1A high Continuous Collector Current • ICM = 3A Peak Pulse Current • RCE(sat) = 160mΩ for a low equivalent On-Resistance • 625mW Power dissipation • hFE specified up to 3A for high current gain hold up • Totally Lead-Free & Fully RoHS compliant (Notes 1 &a

文件：202.14 Kbytes 页数：6 Pages

DIODES

美台半导体

丝印：624；Package：SOT-23；NPN Transistors

■ Features ● Collector Current Capability IC=1A ● Collector Emitter Voltage VCEO=125V ● Complementary to FMMT723

文件：950.27 Kbytes 页数：4 Pages

KEXIN

科信电子

通用三极管

Bluecolour

蓝彩电子

普通三极管

FOSAN

富信半导体

NPN, 125V, 1A, SOT23

Diodes

美台半导体

150V NPN SILICON LOW SATURATION TRANSISTOR IN SOT-23

Features • BVCEO > 125V • IC = 1A high Continuous Collector Current • ICM = 3A Peak Pulse Current • RCE(sat) = 160mΩ for a low equivalent On-Resistance • 625mW Power dissipation • hFE specified up to 3A for high current gain hold up • Totally Lead-Free & Fully RoHS compliant (Notes 1 &a

文件：202.14 Kbytes 页数：6 Pages

DIODES

美台半导体

125V NPN LOW SATURATION TRANSISTOR IN SOT23

文件：215.63 Kbytes 页数：7 Pages

DIODES

美台半导体

Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 125V 1A SOT23-3

PAM

龙鼎微