丝印：H2；Package：EMT6；General purpose (dual digital transistors)

Features 1)Two DTC144Es chips in a EMT or UMT or SMT package. 2)Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3)Transistor elements are independent, eliminating interference. 4)Mounting cost and area can be cut in half. Application INVERTER, INTERFAC

文件：64.91 Kbytes 页数：3 Pages

ROHM

罗姆

丝印：H2；Package：EMT6；NPN 100mA 50V Complex Digital Transistors

Features 1)Two DTC144Es chips in a EMT or UMT or SMT package. 2)Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3)Transistor elements are independent, eliminating interference. 4)Mounting cost and area can be cut in half. Application INVERTER, INTERFAC

文件：681.81 Kbytes 页数：8 Pages

ROHM

罗姆

丝印：H2；Package：EMT6；NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)

Features 1)Two DTC144Es chips in a EMT or UMT or SMT package. 2)Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3)Transistor elements are independent, eliminating interference. 4)Mounting cost and area can be cut in half. Application INVERTER, INTERFAC

文件：482.03 Kbytes 页数：8 Pages

ROHM

罗姆

General purpose transistors (dual transistors)

General purpose transistors (dual transistors) FEATURES ● Two DTC144Es chip in a package ● Mounting possible with SOT-563 automatic mounting machines. ● Transistor elements are independent, eliminating interference. ● Mounting cost and area be cut in half.

文件：318.34 Kbytes 页数：1 Pages

HTSEMI

金誉半导体

Dual Digital Transistors (NPNNPN)

Dual Digital Transistors (NPN+NPN) FEATURES ● Two DTC144Es chip in a package ● Mounting possible with SOT-563 automatic mounting machines ● Transistor elements are independent, eliminating interference ● Mounting cost and area be cut in half

文件：3.74233 Mbytes 页数：3 Pages

JIANGSU

长电科技

P-Channel Silicon MOSFET General-Purpose Switching Device

General-Purpose Switching Device Applications Features • The EMH2301 incorporates a P-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting. • 1.8V drive.

文件：42.74 Kbytes 页数：4 Pages

SANYO

三洋

P-Channel Silicon MOSFET General-Purpose Switching Device

P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • The EMH2302 incorporates a P-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting. • 4V drive.

文件：42.36 Kbytes 页数：4 Pages

SANYO

三洋

General-Purpose Switching Device Applications

General-Purpose Switching Device Applications Features • The EMH2308 incorporates a P-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting • 1.8V drive • Halogen free compliance • Protection diode in

文件：280.98 Kbytes 页数：4 Pages

SANYO

三洋

P-Channel Power MOSFET

Features • The EMH2308 incorporates a P-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting • 1.8V drive • Halogen free compliance • Protection diode in

文件：553.24 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

P-Channel Power MOSFET

Features • The EMH2308 incorporates a P-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting • 1.8V drive • Halogen free compliance • Protection diode in

文件：553.24 Kbytes 页数：7 Pages

ONSEMI

安森美半导体