N-Channel Silicon MOSFET General-Purpose Switching Device Applications

General-Purpose Switching Device Applications Features • The EMH2408 incorporates a N-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting • 1.8V drive • Halogen free compliance

文件：100.21 Kbytes 页数：4 Pages

SANYO

三洋

N-Channel Power MOSFET

Features • The EMH2408 incorporates a N-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting • 1.8V drive • Halogen free compliance

文件：554.32 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

N-Channel Power MOSFET

Features • The EMH2409 incorporates a N-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting • 4V drive • Halogen free compliance • Protection diode in

文件：554.87 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

N-Channel Silicon MOSFET General-Purpose Switching Device Applications

General-Purpose Switching Device Applications Features • The EMH2409 incorporates a N-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting • 4V drive • Halogen free compliance • Protection diode in

文件：338.06 Kbytes 页数：4 Pages

SANYO

三洋

N-Channel Power MOSFET

Features • The EMH2409 incorporates a N-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting • 4V drive • Halogen free compliance • Protection diode in

文件：554.87 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

N-Channel Power MOSFET

Features • Low ON-resistance • Best suited for LiB charging and discharging switch • Common-drain type • 2.5V drive • Halogen free compliance • Protection diode in

文件：547.74 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

General-Purpose Switching Device Applications

General-Purpose Switching Device Applications Features • Low ON-resistance • Best suited for LiB charging and discharging switch • Common-drain type • 2.5V drive • Halogen free compliance • Protection diode in

文件：275.98 Kbytes 页数：4 Pages

SANYO

三洋

丝印：T2R；Package：EMT6；General purpose (dual digital transistors)

Features 1) Two DTC143Z chips in a EMT package. 2) Mounting possible with EMT automatic mounting machines. 3) Transistor elements are independent, eliminating interference. 4) Mounting cost and area can be cut in half. Structure Epitaxial planar type NPN silicon transistor

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ROHM

罗姆

N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device

General-Purpose Switching Device Applications Features • The EMH2601 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting. • 1.8V drive.

文件：59.15 Kbytes 页数：6 Pages

SANYO

三洋

N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device

General-Purpose Switching Device Applications Features • The EMH2602 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting. • 4V drive.

文件：71.89 Kbytes 页数：6 Pages

SANYO

三洋