N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device

General-Purpose Switching Device Applications Features • The EMH2603 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting. • Nch: 2.5V drive. • Pch: 1.8V drive.

文件：73.28 Kbytes 页数：7 Pages

SANYO

三洋

General-Purpose Switching Device Applications

General-Purpose Switching Device Applications Features • Nch + Pch MOSFET • ON-resistance Nch : RDS(on)1=34mΩ(typ.) Pch : RDS(on)1=65mΩ(typ.) • 1.8V drive • Halogen free compliance

文件：468.17 Kbytes 页数：6 Pages

SANYO

三洋

Power MOSFET

Features • Nch + Pch MOSFET • ON-resistance Nch : RDS(on)1=34mΩ(typ.) Pch : RDS(on)1=65mΩ(typ.) • 1.8V drive • Halogen free compliance

文件：663.45 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

Power MOSFET

Features • Nch + Pch MOSFET • ON-resistance Nch : RDS(on)1=34mΩ(typ.) Pch : RDS(on)1=65mΩ(typ.) • 1.8V drive • Halogen free compliance

文件：663.45 Kbytes 页数：9 Pages

ONSEMI

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P-Channel Power MOSFET

P-Channel Power MOSFET –20V, –3A, 85mΩ, Single EMH8 with Schottky Diode Features • Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package facilitating high-density mounting • [MOSFET] • Low ON-resistance • 1.8V drive • [SBD] • Smal

文件：660.08 Kbytes 页数：8 Pages

ONSEMI

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SBD : Schottky Barrier Diode General-Purpose Switching Device Applications

MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode Features • Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package facilitating high-density mounting • [MOSFET] • Low ON-resistance • 1.8V drive • [SBD] • Small switching

文件：366.73 Kbytes 页数：5 Pages

SANYO

三洋

P-Channel Power MOSFET

P-Channel Power MOSFET –20V, –3A, 85mΩ, Single EMH8 with Schottky Diode Features • Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package facilitating high-density mounting • [MOSFET] • Low ON-resistance • 1.8V drive • [SBD] • Smal

文件：660.08 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)

Features 1)Two DTC144Es chips in a EMT or UMT or SMT package. 2)Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3)Transistor elements are independent, eliminating interference. 4)Mounting cost and area can be cut in half. Application INVERTER, INTERFAC

文件：482.03 Kbytes 页数：8 Pages

ROHM

罗姆

丝印：H7；Package：EMT6；General purpose (dual digital transistors)

Features 1) Two DTC143T chips in a EMT or UMT package.

文件：62.28 Kbytes 页数：3 Pages

ROHM

罗姆

丝印：H1；Package：EMT6；General purpose (dual digital transistors)

文件：70.72 Kbytes 页数：3 Pages

ROHM

罗姆