BZX585-C11

Marking：H7；Package：SC-79；Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinanSOD523(SC-79)ultrasmallflatleadSurface-MountedDevice (SMD)plasticpackage. 2.Featuresandbenefits •Non-repetitivepeakreversepowerdissipation:≤40W •Totalpowerdissipation:≤300mW •Wideworkingvoltagerange:no

BZX585-C11

Marking：H7；Package：SOD523；Voltage regulator diodes

Featuresandbenefits Non-repetitivepeakreversepower dissipation:40W Totalpowerdissipation:300mW AEC-Q101qualified Wideworkingvoltagerange:nominal 2.4Vto75V(E24range) Twotoleranceseries:2and5 Lowdifferentialresistance

EMH7

Marking：H7；Package：EMT6；General purpose (dual digital transistors)

Features 1)TwoDTC143TchipsinaEMTorUMTpackage.

IMH7A

Marking：H7；Package：SMT6；General purpose (dual digital transistors)

Features 1)TwoDTC143TchipsinaEMTorUMTpackage.

MMBZ16VAL-Q

Marking：H7；Package：SOT23；High surge current unidirectional double ESD protection diode

1.Generaldescription UnidirectionaldoubleElectroStaticDischarge(ESD)protectiondiodesinacommonanode configuration,encapsulatedinaSOT23(TO-236AB)smallSurface-MountedDevice(SMD)plastic package.ThedeviceisdesignedforESDandtransientovervoltageprotectionofuptotwos

NC7SV126L6X

Marking：H7；Package：MicroPak；TinyLogic ULP-A Buffer with Three-State Output

TheNC7SV126isasingle3−Statebufferintinyfootprintpackages. ThedeviceisdesignedtooperateforVCC=0.9Vto3.6V. Features •Designedfor0.9Vto3.6VVCCOperation •1.8nstPDat3.3V(Typ) •Inputs/OutputsOver−VoltageTolerantupto3.6V •IOFFSupportsPartialPower

PHFM307

Marking：H7；3.0A Surface Mount High Effciency Rectifiers -50V - 1000V

FEATURES *Glasspassivateddevice *Idealforsurfacemountedapplications *Lowleakagecurrent *Metallurgicallybondedconstruction *MoistureSensitivityLevel1 *Pb-Freepackageisavailable RoHSproductforpackingcodesuffixG Halohenfreeproductforpackingcodesuffix

PUMH20

Marking：H7；Package：SOT363；NPN/NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ

1.1Generaldescription NPN/NPNresistor-equippedtransistors. 1.2Features Built-inbiasresistors Simplifiescircuitdesign Reducescomponentcount Reducespickandplacecosts 1.3Applications Lowcurrentperipheraldriver ControlofICinputs Replacesgeneral-purposetransisto

PUMH7

Marking：H7；Package：SOT363；NPN/NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = open

FEATURES •Built-inbiasresistors •Simplifiedcircuitdesign •Reductionofcomponentcount •Reducedpickandplacecosts. APPLICATIONS •Lowcurrentperipheraldriver •Replacementofgeneralpurposetransistorsindigitalapplications •ControlofICinputs. DESCRIPTION NPN/NPNresistor-eq

PZU3.9BL

Marking：H7；Package：DFN1006-2；Single Zener diodes in a SOD882 package

1.1.Generaldescription General-purposeZenerdiodesinaSOD882leadlessultrasmallSurface-MountedDevice(SMD) plasticpackage. 1.2.Features •Non-repetitivepeakrerversepowerdissipation:PZSM≤40W •Totalpowerdissipation:Ptot≤250mW •Toleranceseries:B:approximately±5