丝印：E3M0075120J2；Package：TO-263-7XL；Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode

Features • 3rd generation SiC MOSFET technology • Optimized package with separate driver source pin • 4.7mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recove

文件：1.16329 Mbytes 页数：13 Pages

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丝印：E3M0075120K；Package：TO247-4；Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode

Features • 3rd generation SiC MOSFET technology • Optimized package with separate driver source pin • 8mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery

文件：1.03188 Mbytes 页数：13 Pages

WOLFSPEED

丝印：E3M0120090J；Package：TO-263-7；Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode

Features • 3rd generation of SiC MOSFET technology • High blocking voltage with low On-resistance • High speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant • Wide creepage (~7mm) between drain and source • Automotive q

文件：994.09 Kbytes 页数：10 Pages

WOLFSPEED

丝印：E3M0160120D；Package：TO-247-3L；Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode

Features • 3rd generation SiC MOSFET technology • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant • Automotive Qualified (AEC-Q101) and PPAP Capable Applications

文件：1.07521 Mbytes 页数：13 Pages

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SiC N-Channel MOSFET

FEATURES ·High Blocking Voltage with Low On-Resistance ·High Speed Switching with Low Capacitances ·Increased System Switching Frequency APPLICATIONS ·High Voltage DC/DC Converters ·Automotive EV Battery Charges ·Renewable Energy ·Telecom Power Supplies

文件：383.68 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：E3M0900170D；Package：TO-247-3L；1700V 900mΩ Silicon Carbide Power MOSFET N-Channel Enhancement Mode

Features • High blocking voltage with low on-resistance • High-speed switching with low capacitances • 12V...15V/ 0V VGS compatible with most flyback controllers • Ultra-low drain-gate capacitance • Qualified to operate under high humidity and high temperature environmental conditions • Hal

文件：1.02952 Mbytes 页数：13 Pages

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1700V 900mΩ Silicon Carbide Power MOSFET N-Channel Enhancement Mode

Features • High blocking voltage with low on-resistance • High-speed switching with low capacitances • 12V...15V / 0V VGS compatible with most flyback controllers • Ultra-low drain-gate capacitance • Halogen free, RoHS compliant • Automotive qualified (AEC-Q101) and PPAP capable Typical A

文件：1.07985 Mbytes 页数：13 Pages

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Color Rgistration Mark Incandescent

Color Registration Mark Sensor Offers High-Speed Detection ■ 20 microsecond response time ideal for printing and packaging equipment ■ 99-step sensitivity adjustment and incandescent light source assure accurate detection of minute color differnces ■ Fiber-optic verions available for sensing in

文件：1.53962 Mbytes 页数：14 Pages

OMRON

欧姆龙

Color Rgistration Mark Incandescent

Color Registration Mark Sensor Offers High-Speed Detection ■ 20 microsecond response time ideal for printing and packaging equipment ■ 99-step sensitivity adjustment and incandescent light source assure accurate detection of minute color differnces ■ Fiber-optic verions available for sensing in

文件：1.53962 Mbytes 页数：14 Pages

OMRON

欧姆龙

Color Registration Mark Incandescent

Color Registration Mark Sensor Offers High-Speed Detection ■ 20 microsecond response time ideal for printing and packaging equipment ■ 99-step sensitivity adjustment and incandescent light source assure accurate detection of minute color differnces ■ Fiber-optic verions available for sensing in

文件：1.53962 Mbytes 页数：14 Pages

OMRON

欧姆龙