丝印：E3M0075120J2；Package：TO-263-7XL；Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode

Features • 3rd generation SiC MOSFET technology • Optimized package with separate driver source pin • 4.7mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recove

文件：1.16329 Mbytes 页数：13 Pages

WOLFSPEED

丝印：E3M0075120K；Package：TO247-4；Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode

Features • 3rd generation SiC MOSFET technology • Optimized package with separate driver source pin • 8mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery

文件：1.03188 Mbytes 页数：13 Pages

WOLFSPEED

丝印：E3M0120090J；Package：TO-263-7；Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode

Features • 3rd generation of SiC MOSFET technology • High blocking voltage with low On-resistance • High speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant • Wide creepage (~7mm) between drain and source • Automotive q

文件：994.09 Kbytes 页数：10 Pages

WOLFSPEED

丝印：E3M0160120D；Package：TO-247-3L；Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode

Features • 3rd generation SiC MOSFET technology • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant • Automotive Qualified (AEC-Q101) and PPAP Capable Applications

文件：1.07521 Mbytes 页数：13 Pages

WOLFSPEED

丝印：E3M0900170D；Package：TO-247-3L；1700V 900mΩ Silicon Carbide Power MOSFET N-Channel Enhancement Mode

Features • High blocking voltage with low on-resistance • High-speed switching with low capacitances • 12V...15V/ 0V VGS compatible with most flyback controllers • Ultra-low drain-gate capacitance • Qualified to operate under high humidity and high temperature environmental conditions • Hal

文件：1.02952 Mbytes 页数：13 Pages

WOLFSPEED

丝印：E3M0065090；Package：TO-247-3；Silicon Carbide Power MOSFET E-Series Automotive

文件：853.29 Kbytes 页数：10 Pages

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科锐

丝印：E3M0120090；Package：TO-247-3；Silicon Carbide Power MOSFET E-Series Automotive

文件：736.91 Kbytes 页数：10 Pages

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科锐

丝印：E3M0120090J；Package：TO-263-7；Silicon Carbide Power MOSFET E-Series Automotive

文件：981.36 Kbytes 页数：10 Pages

Cree

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丝印：E3M0280090；Package：TO-247-3；Silicon Carbide Power MOSFET E-Series Automotive

文件：734.13 Kbytes 页数：10 Pages

Cree

科锐

SiC N-Channel MOSFET

FEATURES ·High Blocking Voltage with Low On-Resistance ·High Speed Switching with Low Capacitances ·Increased System Switching Frequency APPLICATIONS ·High Voltage DC/DC Converters ·Automotive EV Battery Charges ·Renewable Energy ·Telecom Power Supplies

文件：383.68 Kbytes 页数：2 Pages

ISC

无锡固电