E3M0900170D芯片代码丝印对应型号-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
E3M0900170D	文件：1.02952 Mbytes Page：13 Pages	丝印：E3M0900170D；Package：TO-247-3L；1700V 900mΩ Silicon Carbide Power MOSFET N-Channel Enhancement Mode Features • High blocking voltage with low on-resistance • High-speed switching with low capacitances • 12V...15V/ 0V VGS compatible with most flyback controllers • Ultra-low drain-gate capacitance • Qualified to operate under high humidity and high temperature environmental conditions • Hal 文件：1.02952 Mbytes 页数：13 Pages	WOLFSPEED	WOLFSPEED
E3M0900170D	文件：1.02952 Mbytes Page：13 Pages	丝印：E3M0900170D；Package：TO-247-3L；1700V 900mΩ Silicon Carbide Power MOSFET N-Channel Enhancement Mode Features • High blocking voltage with low on-resistance • High-speed switching with low capacitances • 12V...15V/ 0V VGS compatible with most flyback controllers • Ultra-low drain-gate capacitance • Qualified to operate under high humidity and high temperature environmental conditions • Hal 文件：1.02952 Mbytes 页数：13 Pages	WOLFSPEED	WOLFSPEED

更多E3M0900170D供应商更新时间2025-4-18 9:57:00