SiC N-Channel MOSFET

FEATURES ·High Blocking Voltage with Low On-Resistance ·High Speed Switching with Low Capacitances ·Increased System Switching Frequency APPLICATIONS ·High Voltage DC/DC Converters ·Automotive EV Battery Charges ·Renewable Energy ·Telecom Power Supplies

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无锡固电

丝印：E3M0280090；Package：TO-247-3；Silicon Carbide Power MOSFET E-Series Automotive

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SiC MOSFETs

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Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

Features • C3M SiC MOSFET technology • High blocking voltage with low On-resistance • High speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant Benefits • Higher system efficiency • Reduced cooling requirements • Incre

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Silicon Carbide Power MOSFET

文件：1.19782 Mbytes 页数：10 Pages

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Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

Features • New C3M SiC MOSFET technology • High blocking voltage with low On-resistance • High speed switching with low capacitances • New low impedance package with driver source • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant • Wide creepage (~7mm) be

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