丝印：E3M0016120K；Package：TO-247-4L；Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode

Features • 3rd generation SiC MOSFET technology • Optimized package with separate driver source pin • 8mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery

文件：1.25713 Mbytes 页数：13 Pages

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丝印：E3M0021120J2；Package：TO-263-7XL；Silicon Carbide Power MOSFET

Features • 3rd generation SiC MOSFET technology • Optimized package with separate driver source pin • 4.7mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recove

文件：1.2941 Mbytes 页数：13 Pages

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丝印：E3M0021120K；Package：TO-247-4L；Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode

Features • 3rd generation SiC MOSFET technology • Optimized package with separate driver source pin • 8mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery

文件：1.26684 Mbytes 页数：13 Pages

WOLFSPEED

丝印：E3M0032120J2；Package：TO-263-7XL；Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode

Features • 3rd generation SiC MOSFET technology • Optimized package with separate driver source pin • 4.7mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recove

文件：1.25825 Mbytes 页数：13 Pages

WOLFSPEED

丝印：E3M0032120K；Package：TO-247-4L；Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode

Features • 3rd generation SiC MOSFET technology • Optimized package with separate driver source pin • 8mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery

文件：1.32454 Mbytes 页数：13 Pages

WOLFSPEED

丝印：E3M0040120K；Package：TO-247-4L；Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode

Features • 3rd generation SiC MOSFET technology • Optimized package with separate driver source pin • 8mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery

文件：1.20076 Mbytes 页数：13 Pages

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丝印：E3M0045065K；Package：TO-247-4L；Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode

Features • 3rd generation SiC MOSFET technology • Optimized package with separate driver source pin • 8mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery

文件：1.13431 Mbytes 页数：13 Pages

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丝印：E3M0060065D；Package：TO-247-3L；Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode

Features • 3rd generation SiC MOSFET technology • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant • Automotive Qualified (AEC-Q101) and PPAP Capable Benefits • Hi

文件：980.17 Kbytes 页数：13 Pages

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丝印：E3M0060065K；Package：TO-247-4L；Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode

Features • 3rd generation SiC MOSFET technology • Optimized package with separate driver source pin • 8mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery

文件：1.18505 Mbytes 页数：13 Pages

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丝印：E3M0075120D；Package：TO-247-3L；Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode

Features • 3rd generation SiC MOSFET technology • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant • Automotive Qualified (AEC-Q101) and PPAP Capable Typical Appl

文件：972.67 Kbytes 页数：13 Pages

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