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E3M0060065D

丝印:E3M0060065D;Package:TO-247-3L;Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode

Features • 3rd generation SiC MOSFET technology • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant • Automotive Qualified (AEC-Q101) and PPAP Capable Benefits • Hi

文件:980.17 Kbytes 页数:13 Pages

WOLFSPEED

E3M0060065D

碳化硅MOSFET

Automotive Qualified (AEC-Q101) and PPAP capableHigh breakdown voltage across entire operating temperature rangeHigh-speed switching with low output capacitanceHigh blocking voltage with low RDS(on)Fast intrinsic diode with low reverse recovery (Qrr) • Automotive Qualified (AEC-Q101) and PPAP capable\n• High breakdown voltage across entire operating temperature range\n• High-speed switching with low output capacitance\n• High blocking voltage with low RDS(on)\n• Fast intrinsic diode with low reverse recovery (Qrr);

Wolfspeed(CREE)

E3M0060065K

Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode

Features • 3rd generation SiC MOSFET technology • Optimized package with separate driver source pin • 8mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery

文件:1.18505 Mbytes 页数:13 Pages

WOLFSPEED

C3M0060065D

Silicon Carbide Power MOSFET

文件:1.10987 Mbytes 页数:11 Pages

Cree

科锐

C3M0060065D

Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

Features • 3rd Generation SiC MOSFET technology • High blocking voltage with low on-resistance • High speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant Benefits • Higher system efficiency • Reduced cooling requiremen

文件:1.07657 Mbytes 页数:11 Pages

WOLFSPEED

C3M0060065D

SiC N-Channel MOSFET

FEATURES ·High Speed Switching with Low Capacitances ·High Blocking Voltage with Low On-Resistance ·Easy to Parallel and Simple to Drive APPLICATIONS ·Solar Inverters ·Switch Mode Power Supplies ·High-voltage Capacitive Loads ·Motor drives

文件:437.34 Kbytes 页数:3 Pages

ISC

无锡固电

技术参数

  • 阻断电压:

    650 V

  • 导通电阻 RDS(ON) @ 25°C:

    60 mΩ

  • 代际:

    Gen 3

  • 额定电流:

    37 A

  • 总栅极电荷:

    46 nC

  • 输出电容:

    72 pF

  • 总功率损耗 (PTOT):

    131 W

  • 最高结点温度:

    175 °C

  • 封装:

    TO-247-3

  • 新设计推荐?:

    Yes

  • 认证:

    Automotive

供应商型号品牌批号封装库存备注价格
24+
N/A
80000
一级代理-主营优势-实惠价格-不悔选择
询价
Cree/Wolfspeed
21+
TO-247-3
3000
进口原装!长期供应!绝对优势价格(诚信经营)!!
询价
Cree/Wolfspeed
2022+
TO-247-3
38550
全新原装 支持表配单 中国著名电子元器件独立分销
询价
Cree/Wolfspeed
100
询价
Wolfspeed
25+
Tube
4430
郑重承诺只做原装进口现货
询价
Wolfspeed
2025
11628
全新、原装
询价
Wolfspeed
25+
TO-247-4
500000
源自原厂成本,高价回收工厂呆滞
询价
CREE
23+
TO247
28888
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
IFM
23+
SENSOR
128
全新、原装
询价
日本芝浦
00+
2000
普通
询价
更多E3M0060065D供应商 更新时间2025-10-12 11:06:00