丝印：E3M0045065K；Package：TO-247-4L；Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode

Features • 3rd generation SiC MOSFET technology • Optimized package with separate driver source pin • 8mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery

文件：1.13431 Mbytes 页数：13 Pages

WOLFSPEED

Automotive-qualified Silicon Carbide MOSFETs

Wolfspeed extends its leadership in Silicon Carbide by introducing the E-Series line of Silicon Carbide (SiC) MOSFETs; automotive qualified; PPAP capable and humidity resistant MOSFET. It features Wolfspeed’s 3rd generation rugged technology; offering the industry’s lowest switching losses and highe • Automotive Qualified (AEC-Q101) and PPAP capable\n• High breakdown voltage across entire operating temperature range\n• High-speed switching with low output capacitance\n• High blocking voltage with low RDS(on)\n• Fast intrinsic diode with low reverse recovery (Qrr);

Wolfspeed(CREE)

Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

Features • 3rd Generation SiC MOSFET technology • High blocking voltage with low on-resistance • High speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant Benefits • Higher system efficiency • Reduced cooling requiremen

文件：960.72 Kbytes 页数：11 Pages

WOLFSPEED

Silicon Carbide Power MOSFET

文件：961.61 Kbytes 页数：11 Pages

CREE

科锐

Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

Features • C3MTM SiC MOSFET technology • Optimized package with separate driver source pin • 8mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) •

文件：1.08343 Mbytes 页数：12 Pages

WOLFSPEED