丝印：E3M0120090J；Package：TO-263-7；Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode

Features • 3rd generation of SiC MOSFET technology • High blocking voltage with low On-resistance • High speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant • Wide creepage (~7mm) between drain and source • Automotive q

文件：994.09 Kbytes 页数：10 Pages

WOLFSPEED

丝印：E3M0120090J；Package：TO-263-7；Silicon Carbide Power MOSFET E-Series Automotive

文件：981.36 Kbytes 页数：10 Pages

Cree

科锐

丝印：E3M0120090J；Package：TO-263-7；Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode

Features • 3rd generation of SiC MOSFET technology • High blocking voltage with low On-resistance • High speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant • Wide creepage (~7mm) between drain and source • Automotive q

文件：994.09 Kbytes 页数：10 Pages

WOLFSPEED

丝印：E3M0120090J；Package：TO-263-7；Silicon Carbide Power MOSFET E-Series Automotive

文件：981.36 Kbytes 页数：10 Pages

Cree

科锐