丝印：E3M0120090J；Package：TO-263-7；Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode

Features • 3rd generation of SiC MOSFET technology • High blocking voltage with low On-resistance • High speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant • Wide creepage (~7mm) between drain and source • Automotive q

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丝印：E3M0120090J；Package：TO-263-7；Silicon Carbide Power MOSFET E-Series Automotive

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E-Series Discrete Silicon Carbide MOSFETs

Automotive Qualified (AEC-Q101) and PPAP capableHigh breakdown voltage across entire operating temperature rangeHigh-speed switching with low output capacitanceHigh blocking voltage with low RDS(on)Fast intrinsic diode with low reverse recovery (Qrr) • Automotive Qualified (AEC-Q101) and PPAP capable\n• High breakdown voltage across entire operating temperature range\n• High-speed switching with low output capacitance\n• High blocking voltage with low RDS(on)\n• Fast intrinsic diode with low reverse recovery (Qrr);

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Silicon Carbide Power MOSFET

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Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

Features • C3M SiC MOSFET technology • High blocking voltage with low On-resistance • High speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant Benefits • Higher system efficiency • Reduced cooling requirements • Incre

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Silicon Carbide Power MOSFET

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