LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR

Features • Epitaxial Planar Die Construction • Low Collector-Emitter Saturation Voltage, VCE(SAT) • Complementary PNP Type Available (DSS5160U) • Ultra-Small Surface Mount Package • Lead Free By Design/RoHS Compliant (Note 1) • Green Device (Note 2)

文件：173.45 Kbytes 页数：5 Pages

DIODES

美台半导体

LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR

Features • Epitaxial Planar Die Construction • Complementary PNP Type Available (DSS5160V) • Low Collector-Emitter Saturation Voltage, VCE(SAT) • Surface Mount Package Suited for Automated Assembly • Ultra-Small Surface Mount Package • Lead Free/RoHS Compliant (Note 1) • Green Device (Note

文件：120.21 Kbytes 页数：5 Pages

DIODES

美台半导体

LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR

Features • Epitaxial Planar Die Construction • Complementary PNP Type Available (DSS5160V) • Low Collector-Emitter Saturation Voltage, VCE(SAT) • Surface Mount Package Suited for Automated Assembly • Ultra-Small Surface Mount Package • Lead Free/RoHS Compliant (Note 1) • Green Device (Note

文件：120.21 Kbytes 页数：5 Pages

DIODES

美台半导体

LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR

Features • Epitaxial Planar Die Construction • Complementary PNP Type Available (DSS5220V) • Low Collector-Emitter Saturation Voltage, VCE(SAT) • High Current Gain (hFE) at High IC • Surface Mount Package Suited for Automated Assembly • Ultra-Small Surface Mount Package • Lead Free/RoHS Com

文件：126.47 Kbytes 页数：5 Pages

DIODES

美台半导体

LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR

Features • Epitaxial Planar Die Construction • Complementary PNP Type Available (DSS5220V) • Low Collector-Emitter Saturation Voltage, VCE(SAT) • High Current Gain (hFE) at High IC • Surface Mount Package Suited for Automated Assembly • Ultra-Small Surface Mount Package • Lead Free/RoHS Com

文件：126.47 Kbytes 页数：5 Pages

DIODES

美台半导体

LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR

Features • BVCEO > 40V • IC = 2A High Continuous Collector Current • ICM = 3A Peak Pulse Current • Low Saturation Voltage 180mV Max @ IC = 1A • RCE(SAT) = 60mΩ at 0.5A for a Low Equivalent On-Resistance • 730mW Power Dissipation • Complimentary PNP Type: DSS5240T • Totally Lead-Free &

文件：112.53 Kbytes 页数：5 Pages

DIODES

美台半导体

LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR

Features • BVCEO > 40V • IC = 2A High Continuous Collector Current • ICM = 3A Peak Pulse Current • Low Saturation Voltage 180mV Max @ IC = 1A • RCE(SAT) = 60mΩ at 0.5A for a Low Equivalent On-Resistance • 730mW Power Dissipation • Complimentary PNP Type: DSS5240T • Totally Lead-Free &

文件：112.53 Kbytes 页数：5 Pages

DIODES

美台半导体

NPN General Purpose Transistor

Features Supply line switching circuits « DC/DC converter applications. « Battery management applications

文件：2.19045 Mbytes 页数：4 Pages

TECHPUBLIC

台舟电子

LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR

Features • Epitaxial Planar Die Construction • Complementary PNP Type Available (DSS5240V) • Low Collector-Emitter Saturation Voltage, VCE(SAT) • Surface Mount Package Suited for Automated Assembly • Ultra-Small Surface Mount Package • Lead Free/RoHS Compliant (Note 1) • Green Device (Note

文件：124.74 Kbytes 页数：5 Pages

DIODES

美台半导体

LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR

Features • Epitaxial Planar Die Construction • Complementary PNP Type Available (DSS5240V) • Low Collector-Emitter Saturation Voltage, VCE(SAT) • Surface Mount Package Suited for Automated Assembly • Ultra-Small Surface Mount Package • Lead Free/RoHS Compliant (Note 1) • Green Device (Note

文件：124.74 Kbytes 页数：5 Pages

DIODES

美台半导体