LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR

Features • Epitaxial Planar Die Construction • Low Collector-Emitter Saturation Voltage, VCE(SAT) • Complementary PNP Type Available (DSS5160U) • Ultra-Small Surface Mount Package • Lead Free By Design/RoHS Compliant (Note 1) • Green Device (Note 2)

文件：173.45 Kbytes 页数：5 Pages

DIODES

美台半导体

LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR

Features • Epitaxial Planar Die Construction • Complementary PNP Type Available (DSS5160V) • Low Collector-Emitter Saturation Voltage, VCE(SAT) • Surface Mount Package Suited for Automated Assembly • Ultra-Small Surface Mount Package • Lead Free/RoHS Compliant (Note 1) • Green Device (Note

文件：120.21 Kbytes 页数：5 Pages

DIODES

美台半导体

LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR

Features • Epitaxial Planar Die Construction • Complementary PNP Type Available (DSS5160V) • Low Collector-Emitter Saturation Voltage, VCE(SAT) • Surface Mount Package Suited for Automated Assembly • Ultra-Small Surface Mount Package • Lead Free/RoHS Compliant (Note 1) • Green Device (Note

文件：120.21 Kbytes 页数：5 Pages

DIODES

美台半导体

LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR

Features • Epitaxial Planar Die Construction • Complementary PNP Type Available (DSS5220V) • Low Collector-Emitter Saturation Voltage, VCE(SAT) • High Current Gain (hFE) at High IC • Surface Mount Package Suited for Automated Assembly • Ultra-Small Surface Mount Package • Lead Free/RoHS Com

文件：126.47 Kbytes 页数：5 Pages

DIODES

美台半导体

LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR

Features • Epitaxial Planar Die Construction • Complementary PNP Type Available (DSS5220V) • Low Collector-Emitter Saturation Voltage, VCE(SAT) • High Current Gain (hFE) at High IC • Surface Mount Package Suited for Automated Assembly • Ultra-Small Surface Mount Package • Lead Free/RoHS Com

文件：126.47 Kbytes 页数：5 Pages

DIODES

美台半导体

LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR

Features • BVCEO > 40V • IC = 2A High Continuous Collector Current • ICM = 3A Peak Pulse Current • Low Saturation Voltage 180mV Max @ IC = 1A • RCE(SAT) = 60mΩ at 0.5A for a Low Equivalent On-Resistance • 730mW Power Dissipation • Complimentary PNP Type: DSS5240T • Totally Lead-Free &

文件：112.53 Kbytes 页数：5 Pages

DIODES

美台半导体

LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR

Features • BVCEO > 40V • IC = 2A High Continuous Collector Current • ICM = 3A Peak Pulse Current • Low Saturation Voltage 180mV Max @ IC = 1A • RCE(SAT) = 60mΩ at 0.5A for a Low Equivalent On-Resistance • 730mW Power Dissipation • Complimentary PNP Type: DSS5240T • Totally Lead-Free &

文件：112.53 Kbytes 页数：5 Pages

DIODES

美台半导体

LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR

Features • Epitaxial Planar Die Construction • Complementary PNP Type Available (DSS5240V) • Low Collector-Emitter Saturation Voltage, VCE(SAT) • Surface Mount Package Suited for Automated Assembly • Ultra-Small Surface Mount Package • Lead Free/RoHS Compliant (Note 1) • Green Device (Note

文件：124.74 Kbytes 页数：5 Pages

DIODES

美台半导体

LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR

Features • Epitaxial Planar Die Construction • Complementary PNP Type Available (DSS5240V) • Low Collector-Emitter Saturation Voltage, VCE(SAT) • Surface Mount Package Suited for Automated Assembly • Ultra-Small Surface Mount Package • Lead Free/RoHS Compliant (Note 1) • Green Device (Note

文件：124.74 Kbytes 页数：5 Pages

DIODES

美台半导体

40V LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR

Features Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching Complementary PNP Type Available (DSS5240Y) Ultra Small Surface Mount Package “Lead Free”, RoHS Compliant (Note 1) Halogen and Antimony Free Green Device (Note 2) ESD rating: 400V-MM, 8KV-HBM Qualifi

文件：133.14 Kbytes 页数：5 Pages

DIODES

美台半导体