SIP SERIES REED RELAYS

SIP SERIES REED RELAYS

文件：609.79 Kbytes 页数：7 Pages

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR

Features • Epitaxial Planar Die Construction • Low Collector-Emitter Saturation Voltage • Low Collector-Emitter Saturation Voltage, VCE(SAT) • Complementary PNP Type Available (DSS5140U) • Ultra-Small Surface Mount Package • Lead Free By Design/RoHS Compliant (Note 1) • Green Device (Note 2

文件：118.64 Kbytes 页数：5 Pages

DIODES

美台半导体

LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR

Features • Epitaxial Planar Die Construction • Complementary PNP Type Available (DSS5140V) • Low Collector-Emitter Saturation Voltage, VCE(SAT) • Surface Mount Package Suited for Automated Assembly • Ultra-Small Surface Mount Package • Lead Free/RoHS Compliant (Note 1) • Green Device (Note

文件：125.21 Kbytes 页数：5 Pages

DIODES

美台半导体

LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR

Features • Epitaxial Planar Die Construction • Complementary PNP Type Available (DSS5140V) • Low Collector-Emitter Saturation Voltage, VCE(SAT) • Surface Mount Package Suited for Automated Assembly • Ultra-Small Surface Mount Package • Lead Free/RoHS Compliant (Note 1) • Green Device (Note

文件：125.21 Kbytes 页数：5 Pages

DIODES

美台半导体

60V DUAL NPN LOW SATURATION TRANSISTOR IN SOT26

Features BVCEO > 60V IC = 1A high Continuous Collector Current ICM = 2A Peak Pulse Current RCE(sat) = 100mΩ for a Low Equivalent On-Resistance Low Saturation Voltage VCE(sat)

文件：243.03 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：ZN9；Package：SOT26；60V DUAL NPN LOW SATURATION TRANSISTOR IN SOT26

Features BVCEO > 60V IC = 1A high Continuous Collector Current ICM = 2A Peak Pulse Current RCE(sat) = 100mΩ for a Low Equivalent On-Resistance Low Saturation Voltage VCE(sat)

文件：243.03 Kbytes 页数：7 Pages

DIODES

美台半导体

60V NPN LOW SATURATION TRANSISTOR IN SOT23

Features BVCEO > 60V IC = 1A High Continuous Collector Current ICM = 2A Peak Pulse Current RCE(sat) = 280mΩ for a Low Equivalent On-Resistance Low Saturation Voltage VCE(sat)

文件：327.41 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：ZN9；Package：SOT23；60V NPN LOW SATURATION TRANSISTOR IN SOT23

Features BVCEO > 60V IC = 1A High Continuous Collector Current ICM = 2A Peak Pulse Current RCE(sat) = 280mΩ for a Low Equivalent On-Resistance Low Saturation Voltage VCE(sat)

文件：327.41 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：ZN9；Package：SOT23；60V NPN LOW SATURATION TRANSISTOR IN SOT23

Features BVCEO > 60V IC = 1A High Continuous Collector Current ICM = 2A Peak Pulse Current RCE(sat) = 280mΩ for a Low Equivalent On-Resistance Low Saturation Voltage VCE(sat)

文件：327.41 Kbytes 页数：7 Pages

DIODES

美台半导体

LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR

Features • Epitaxial Planar Die Construction • Low Collector-Emitter Saturation Voltage, VCE(SAT) • Complementary PNP Type Available (DSS5160U) • Ultra-Small Surface Mount Package • Lead Free By Design/RoHS Compliant (Note 1) • Green Device (Note 2)

文件：173.45 Kbytes 页数：5 Pages

DIODES

美台半导体