20V N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low RDS(ON)—Ensures On-State Losses are Minimized  Small-Form Factor Thermally Efficient Package Enables Higher Density End Products  Occupies 33 of the Board Area Occupied by SO-8 Enabling Smaller End Product  100 Unclamped Inductive Switching, Test in Production— Ensures Mor

文件：562.19 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：N05；Package：PowerDI3333-8；20V N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low RDS(ON)—Ensures On-State Losses are Minimized  Small-Form Factor Thermally Efficient Package Enables Higher Density End Products  Occupies 33 of the Board Area Occupied by SO-8 Enabling Smaller End Product  100 Unclamped Inductive Switching, Test in Production— Ensures Mor

文件：562.19 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：N05；Package：PowerDI3333-8；20V N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low RDS(ON)—Ensures On-State Losses are Minimized  Small-Form Factor Thermally Efficient Package Enables Higher Density End Products  Occupies 33 of the Board Area Occupied by SO-8 Enabling Smaller End Product  100 Unclamped Inductive Switching, Test in Production— Ensures Mor

文件：562.19 Kbytes 页数：7 Pages

DIODES

美台半导体

20V N-CHANNEL ENHANCEMENT MODE MOSFET

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101 and supported by a PPAP. • Low RDS(ON)—Ensures On-State Losses are Minimized• Small-Form Factor Thermally Efficient Package Enables Higher Density End Products• Occupies 33% of the Board Area Occupied by SO-8 Enabling Smaller End Product• 100% Unclamped Inductive Switching, Test in Production—Ensures More Reliable A;

Diodes

美台半导体