丝印：N05；Package：PowerDI3333-8；20V N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low RDS(ON)—Ensures On-State Losses are Minimized  Small-Form Factor Thermally Efficient Package Enables Higher Density End Products  Occupies 33 of the Board Area Occupied by SO-8 Enabling Smaller End Product  100 Unclamped Inductive Switching, Test in Production— Ensures Mor

文件：562.19 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：N05；Package：PowerDI3333-8；20V N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low RDS(ON)—Ensures On-State Losses are Minimized  Small-Form Factor Thermally Efficient Package Enables Higher Density End Products  Occupies 33 of the Board Area Occupied by SO-8 Enabling Smaller End Product  100 Unclamped Inductive Switching, Test in Production— Ensures Mor

文件：562.19 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：N05；Package：SOT-23；Transient Voltage Suppressors for ESD Protection

Feature 168~350 Watts Peak Pulse Power per Line (tp=8/20μs) Protects two unidirectional I/O lines Protects one bidirectional I/O line Working voltage:3.3~24V Low clamping voltage Low leakage current IEC61000-4-4 (EFT) 40A (5/50ηs) IEC61000-4-2(ESD) ±25kV (air), ±20kV (contact) :3.3V~8V IE

文件：2.49906 Mbytes 页数：4 Pages

UNSEMI

优恩半导体

丝印：N05；Package：SOT-23；Transient Voltage Suppressors for ESD Protection

Feature Moisture Sensitivity Level (MSL -1) AEC-Q101 qualified 168~350 Watts Peak Pulse Power per Line (tp=8/20μs) Protects two unidirectional I/O lines Protects one bidirectional I/O line Low clamping voltage Working Voltages: 3.3V~ 24V Low leakage current IEC61000-4-4 (EFT): 40A (5/50ηs

文件：2.49989 Mbytes 页数：4 Pages

UNSEMI

优恩半导体

丝印：N05；Package：DFN；Fixed and Adjustable Current Limiting Power Distribution Switches

文件：3.94238 Mbytes 页数：38 Pages

Microchip

微芯科技

PNP SILICON EPITAXIAL TRANSISTOR

FEATURES ● Complements to N0500S. ● VCEO = -50 V ● IC(DC) = -0.7 A ● Miniature package SOT-23F (2SB799: Package variation of 3pPoMM)

文件：84.35 Kbytes 页数：5 Pages

RENESAS

瑞萨

PNP SILICON EPITAXIAL TRANSISTOR

FEATURES ● Complements to N0500S. ● VCEO = -50 V ● IC(DC) = -0.7 A ● Miniature package SOT-23F (2SB799: Package variation of 3pPoMM)

文件：84.35 Kbytes 页数：5 Pages

RENESAS

瑞萨

NPN SILICON EPITAXIAL TRANSISTOR

FEATURES ● Complements to N0500R. ● VCEO = 50 V ● IC(DC) = 0.7 A ● Miniature package SOT-23F (2SD1000: Package variation of 3pPoMM)

文件：84.56 Kbytes 页数：5 Pages

RENESAS

瑞萨

NPN SILICON EPITAXIAL TRANSISTOR

FEATURES ● Complements to N0500R. ● VCEO = 50 V ● IC(DC) = 0.7 A ● Miniature package SOT-23F (2SD1000: Package variation of 3pPoMM)

文件：84.56 Kbytes 页数：5 Pages

RENESAS

瑞萨

PNP SILICON EPITAXIAL TRANSISTOR

FEATURES ● Complements to N0501S. ● VCEO = -50 V ● IC(DC) = -1.0 A ● Miniature package SOT-23F (2SB1115: Package variation of 3pPoMM)

文件：84.47 Kbytes 页数：5 Pages

RENESAS

瑞萨