| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
12V N-CHANNEL ENHANCEMENT MODE MOSFET Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features • 0.6mm Profile – Ideal for Low-Profile Applications • PCB Footprint of 4mm2 文件：493.41 Kbytes 页数：7 Pages | DIODES 美台半导体 | DIODES | ||
12V N-CHANNEL ENHANCEMENT MODE MOSFET Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features • 0.6mm Profile – Ideal for Low-Profile Applications • PCB Footprint of 4mm2 文件：493.41 Kbytes 页数：7 Pages | DIODES 美台半导体 | DIODES | ||
12V N-CHANNEL ENHANCEMENT MODE MOSFET Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features • Low RDS(ON) – Ensures On-State Losses are Minimized • Small Form Factor Thermally Effici 文件：375.17 Kbytes 页数：7 Pages | DIODES 美台半导体 | DIODES | ||
12V N-CHANNEL ENHANCEMENT MODE MOSFET Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features • Low RDS(ON) – Ensures On-State Losses are Minimized • Small Form Factor Thermally Effici 文件：375.17 Kbytes 页数：7 Pages | DIODES 美台半导体 | DIODES | ||
12V N-CHANNEL ENHANCEMENT MODE MOSFET Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features • Low RDS(ON) – Ensures On-State Losses are Minimized • Small Form Factor Thermally Effici 文件：375.17 Kbytes 页数：7 Pages | DIODES 美台半导体 | DIODES | ||
N-CHANNEL ENHANCEMENT MODE MOSFET Description This new generation MOSFET is designed to minimize the on-state resistance (RSS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Features • CSP with Footprint 2.70mm ×1.81mm • Height = 0.21mm for Low Profile • 文件：482.68 Kbytes 页数：7 Pages | DIODES 美台半导体 | DIODES | ||
N-CHANNEL ENHANCEMENT MODE MOSFET Description This new generation MOSFET is designed to minimize the on-state resistance (RSS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Features • CSP with Footprint 2.70mm ×1.81mm • Height = 0.21mm for Low Profile • 文件：482.68 Kbytes 页数：7 Pages | DIODES 美台半导体 | DIODES | ||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Extremely Low On-Resistance: 170mΩ @ VGS = 4.5V • High Drain Current: 1.1A • Ideal for Notebook Computer, Portable Phone, PCMCIA Cards, and Battery Powered Circuits • ESD Protected Gate • Lead Free By Design/RoHS Compliant (Note 1) • Green Device (Note 2) • Qualified to AEC-Q 文件：63.86 Kbytes 页数：3 Pages | DIODES 美台半导体 | DIODES | ||
12V N-CHANNEL ENHANCEMENT MODE MOSFET Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Features • 0.6mm Profile – Ideal for Low Profile Applications • PCB Footprint of 4mm2 • Low Gat 文件：573.61 Kbytes 页数：7 Pages | DIODES 美台半导体 | DIODES | ||
12V N-CHANNEL ENHANCEMENT MODE MOSFET Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Features • 0.6mm Profile – Ideal for Low Profile Applications • PCB Footprint of 4mm2 • Low Gat 文件：573.61 Kbytes 页数：7 Pages | DIODES 美台半导体 | DIODES |
技术参数
- Automotive Compliant PPAP：
On Request*
- Polarity：
N
- ESD Diodes：
Yes
- VDS：
30 V
- VGS：
20 ±V
- IDS @ TA = +25°C：
1.1 A
- PD @ TA = +25°C：
0.5 W
- RDS(ON) Max @ VGS (10V)：
170 mΩ
- RDS(ON) Max @ VGS (4.5V)：
240 mΩ
- RDS(ON) Max @ VGS (2.5V)：
N/A mΩ
- RDS(ON) Max @ VGS (1.8V)：
N/A mΩ
- VGS (th) Max：
3 V
- QG Typ @ VGS = 4.5V (nC)：
N/A nC
- QG Typ @ VGS = 10V (nC)：
5.5 nC
- Packages：
SC59
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
DIODES/美台 |
25+ |
SOT-23 |
20300 |
DIODES/美台原装特价DMN100即刻询购立享优惠#长期有货 |
询价 | ||
DIODES/美台 |
2025+ |
SC59 |
5000 |
原装进口价格优 请找坤融电子! |
询价 | ||
ON/DIODES/PANJIT |
24+ |
SC59 |
43000 |
询价 | |||
DIODES |
16+ |
SC59 |
37000 |
鍏ㄦ柊鍘熻鐜拌揣/浠锋牸鍙皥! |
询价 | ||
DIODES/美台 |
2447 |
SOT26 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
DIODES/美台 |
23+ |
SC59 |
12000 |
原装正品假一罚百!可开增票! |
询价 | ||
DIODES/美台 |
2022+ |
SOT-23 |
50000 |
原厂代理 终端免费提供样品 |
询价 | ||
DIODES/美台 |
22 |
SC59 |
30000 |
十七年VIP会员,诚信经营，一手货源，原装正品可零售！ |
询价 | ||
DIODES |
2015+ |
SOT23 |
995300 |
原装现货价格优势-含16%增值税 |
询价 | ||
DIODES |
25+ |
3000 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 |
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