N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Extremely Low On-Resistance: 170mΩ @ VGS = 4.5V • High Drain Current: 1.1A • Ideal for Notebook Computer, Portable Phone, PCMCIA Cards, and Battery Powered Circuits • ESD Protected Gate • Lead Free By Design/RoHS Compliant (Note 1) • Green Device (Note 2) • Qualified to AEC-Q

文件：63.86 Kbytes 页数：3 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

Features • Extremely Low On-Resistance: 170mΩ @ VGS = 4.5V • High Drain Current: 1.1A • Ideal for Notebook Computer, Portable Phone, PCMCIA Cards, and Battery Powered Circuits • ESD Protected Gate • Lead Free By Design/RoHS Compliant (Note 1) • Green Device (Note 2) • Qualified to AEC-Q101

文件：159.99 Kbytes 页数：2 Pages

ZPSEMIZP Semiconductor

至尚臻品

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件：86.02 Kbytes 页数：3 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件：154.39 Kbytes 页数：4 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

Diodes

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

Features  CSP with Footprint 1.84mm × 1.96mm  Height = 0.30mm (Typical) for Low Profile  ESD Protection of Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change control (i.

文件：534.07 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：M7；Package：X2-TSN1820-10；N-CHANNEL ENHANCEMENT MODE MOSFET

Features  CSP with Footprint 1.84mm × 1.96mm  Height = 0.30mm (Typical) for Low Profile  ESD Protection of Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change control (i.

文件：534.07 Kbytes 页数：7 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

Description This new generation MOSFET is designed to minimize the on-state resistance (RSS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features • CSP with Footprint 3.05mm ×1.77mm • Height = 0.11mm for Low Profile •

文件：478.69 Kbytes 页数：7 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

Description This new generation MOSFET is designed to minimize the on-state resistance (RSS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features • CSP with Footprint 3.05mm ×1.77mm • Height = 0.11mm for Low Profile •

文件：478.69 Kbytes 页数：7 Pages

DIODES

美台半导体

12V N-CHANNEL ENHANCEMENT MODE MOSFET

Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features • 0.6mm Profile – Ideal for Low-Profile Applications • PCB Footprint of 4mm2

文件：493.41 Kbytes 页数：7 Pages

DIODES

美台半导体