DMN1004UFDF-13中文资料美台半导体数据手册PDF规格书

描述 Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.

特性 Features

• 0.6mm Profile – Ideal for Low-Profile Applications

• PCB Footprint of 4mm2

• Low Gate Threshold Voltage

• Low On-Resistance

• ESD Protected Gate

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• For automotive applications requiring specific change

control (i.e.: parts qualified to AEC-Q100/101/200, PPAP

capable, and manufactured in IATF 16949 certified facilities),

please refer to the related automotive grade (Q-suffix) part.

A listing can be found at

https://www.diodes.com/products/automotive/automotive-products/.

• This part is qualified to JEDEC standards (as references in

AEC-Q) for High Reliability.

https://www.diodes.com/quality/product-definitions/

Applications

• General Purpose Interfacing Switch

• Power Management Functions