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IRFL9014PBF

HEXFET짰PowerMOSFET

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountusingvaporphase,infrared,orwavesolderin

IRF

International Rectifier

IRFL9014PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountingusingvaporphase,infrared,orwavesolderingtechniq

VishayVishay Siliconix

威世科技威世科技半导体

IRFL9014TR

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountingusingvaporphase,infrared,orwavesolderingtechniq

VishayVishay Siliconix

威世科技威世科技半导体

IRFL9014TR

-60VP-ChannelMOSFET

Description TheSOT-223packageisdesignedforsurface-mounting usingvaporphase,infrared,orwavesolderingtechniques. Itsuniquepackagedesignallowsforeasyautomaticpickand- placeaswithotherSOTorSOPpackagesbuthasthe addedadvantageofimprovedthermalperformancedueto

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊欧翊欧半导体

IRFL9014TRPBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountingusingvaporphase,infrared,orwavesolderingtechniq

VishayVishay Siliconix

威世科技威世科技半导体

IRFL9014TRPBF

P-Channel60-V(D-S)MOSFET

FEATURES •TrenchFET®PowerMOSFET •100UISTested APPLICATIONS •LoadSwitch

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

IRFL9014TRPBFA

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半导体

IRFR9014

PowerMOSFET(Vdss=-60V,Rds(on)=0.50ohm,Id=-5.1A)

Description ThirdGenerationHESFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. •DynamicdV/dtRating •RepetitiveAvalancheRated •SurfaceMount(IRFR9014) •StraightL

IRF

International Rectifier

IRFR9014

P-CHANNELPOWERMOSFETS

FEATURES •LowerRDS(ON) •Improvedinductiveruggedness •Fastswitchingtimes •Ruggedpolysilicongatecellstructure •Lowerinputcapacitance •Extendedsafeoperatingarea •Improvedhightemperaturereliability

SamsungSamsung semiconductor

三星三星半导体

IRFR9014

HEXFETPowerMOSFET

Description ThirdGenerationHESFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. •DynamicdV/dtRating •RepetitiveAvalancheRated •SurfaceMount(IRFR9014) •StraightL

IRF

International Rectifier

供应商型号品牌批号封装库存备注价格
N/A
23+
80000
专注配单,只做原装进口现货
询价
N/A
23+
80000
专注配单,只做原装进口现货
询价
NS
02+
TO-92
4600
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
NS
2023+
TO-92
8800
正品渠道现货 终端可提供BOM表配单。
询价
NS
21+
TO-92
4600
原装现货假一赔十
询价
23+
TO-92
32687
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
NS/国半
24+
65200
询价
原厂
23+
DIP8
3755
正品原装货价格低
询价
RICHTEK
2020+
QFN
225
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
RICHTEK
1844+
QFN
6528
只做原装正品假一赔十为客户做到零风险!!
询价
更多CS9014供应商 更新时间2025-7-28 15:01:00