CGH60008D-GP4中文资料8 W; 6.0 GHz; GaN HEMT Die数据手册MACOM规格书

描述 Description

The CGH60008D is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity; and higher thermal conductivity. GaN HEMTs offer greater power density and wider bandwidths compared to Si and GaAs transistors.

特性 Features

·8 W Typical PSAT @ 28 V Operation
·5 W Typical PSAT @ 20 V Operation
·High Breakdown Voltage
·High Temperature Operation
·Up to 6 GHz Operation
·High Efficiency

应用 Application

·Test Instrumentation
·Cellular Infrastructure
·Broadband Amplifiers
·2-Way Private Radio
·Class A, AB
·Linear amplifiers suitable for OFDM, W-CDMA, EDGE, CDMA waveforms