CGH40045中文资料45 W RF Power GaN HEMT数据手册MACOM规格书

描述 Description

Note: CGH40045F/P are Not Recommended for New Designs. Refer to CG2H40045F/P. The CGH40045 is an unmatched; gallium-nitride (GaN) high electron mobility transistor (HEMT). The CGH40045; operating from a 28 volt rail; offers a general purpose; broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency; high gain and wide bandwidth capabilities making the CGH40045 ideal for linear and compressed amplifier circuits. The transistor is available in a flange and pill package.

特性 Features

·Up to 4 GHz Operation
·16 dB Small Signal Gain at 2.0 GHz
·12 dB Small Signal Gain at 4.0 GHz
·55 W Typical PSAT
·55% Efficiency at PSAT
·28 V Operation

应用 Application

·Test Instrumentation
·Cellular Infrastructure
·Broadband Amplifiers
·2-Way Private Radio
·Class A, AB
·Linear amplifiers suitable for OFDM, W-CDMA, EDGE, CDMA waveforms