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CGH40006P数据手册分立半导体产品的晶体管-FETMOSFET-射频规格书PDF

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厂商型号

CGH40006P

参数属性

CGH40006P 封装/外壳为440109;包装为卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带;类别为分立半导体产品的晶体管-FETMOSFET-射频;产品描述:RF MOSFET HEMT 28V 440109

功能描述

6 W RF Power GaN HEMT

封装外壳

440109

制造商

MACOM Tyco Electronics

中文名称

玛科姆技术方案控股有限公司

数据手册

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更新时间

2025-8-6 19:37:00

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CGH40006P规格书详情

描述 Description

The CGH40006 is an unmatched; gallium-nitride (GaN) high-electron-mobility transistor (HEMT). The CGH40006; operating from a 28-volt rail; offers a general-purpose; broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency; high gain and wide bandwidth capabilities; making the CGH40006 ideal for linear and compressed amplifier circuits. The transistor is available in a solder-down pill package and a 3-mm x 3-mm; surface-mount; dual-flat-no-lead package.

特性 Features

·Up to 6 GHz Operation
·13 dB Small Signal Gain at 2.0 GHz
·11 dB Small Signal Gain at 6.0 GHz
·8 W typical at PIN = 32 dBm
·28 V Operation

应用 Application

·Cellular Infrastructure
·Broadband Amplifiers
·2-Way Private Radio
·Class A, AB
·OFDM; W-CDMA; EDGE; CDMA waveforms

技术参数

  • 制造商编号

    :CGH40006P

  • 生产厂家

    :MACOM

  • Min Frequency(MHz)

    :0

  • Max Frequency(MHz)

    :6000

  • Peak Output Power(W)

    :6

  • Gain(dB)

    :11.0

  • Efficiency(%)

    :65

  • Operating Voltage(V)

    :28

  • Form

    :Packaged Discrete Transistor

  • Package Category

    :Pill

  • Technology

    :GaN-on-SiC

供应商 型号 品牌 批号 封装 库存 备注 价格
CREE
三年内
1983
只做原装正品
询价
CREE(科锐)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
询价
CREE(科锐)
24+
N/A
9048
原厂可订货,技术支持,直接渠道。可签保供合同
询价
CREE
25+23+
BGA
21782
绝对原装正品全新进口深圳现货
询价
CREE
638
原装正品
询价
CREE
24+
SMD
500
“芯达集团”专营军工百分之百原装进口
询价
CREE
1002
25
公司优势库存 热卖中!
询价
Wolfspeed
25+
Tube
4430
郑重承诺只做原装进口现货
询价
Cree/Wolfspeed
22+
9000
原厂渠道,现货配单
询价
CREE
24+
N/A
90000
进口原装现货假一罚十价格合理
询价