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CGH27030S-AMP1数据手册分立半导体产品的晶体管-FETMOSFET-射频规格书PDF

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厂商型号

CGH27030S-AMP1

参数属性

CGH27030S-AMP1 封装/外壳为12-VFDFN 裸露焊盘;包装为散装;类别为分立半导体产品的晶体管-FETMOSFET-射频;产品描述:AMPLIFIER, 1.8-2.2GHZ, CGH27030S

功能描述

30-W, DC – 6.0-GHz, 28-V, GaN HEMT

封装外壳

12-VFDFN 裸露焊盘

制造商

MACOM Tyco Electronics

中文名称

玛科姆技术方案控股有限公司

数据手册

下载地址下载地址二

更新时间

2025-8-7 16:50:00

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CGH27030S-AMP1规格书详情

描述 Description

The CGH27030 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically for high-efficiency; high-gain and wide-bandwidth capabilities; which makes the CGH27030 ideal for VHF; Comms; 3G; 4G; LTE; 2.3-2.9GHz WiMAX and BWA amplifier applications. The transistor is available in screw-down flange; solder-down pill packages; and a 3mm x 4mm; surface mount; dual-flat-no-lead (DFN) package.                                                                         Note: CGH27030F/P are Not Recommended for New Designs. Refer to CG2H40025F. 

特性 Features

• VHF – 3.0 GHz Operation
• 30 W Peak Power Capability
• > 15 dB Small Signal Gain
• > 28% Drain Efficiency

应用 Application

• VHF; Comms; 3G; 4G; LTE; 2.3-2.9 GHz WiMAX and BWA amplifier applications.

技术参数

  • 制造商编号

    :CGH27030S-AMP1

  • 生产厂家

    :MACOM

  • Min Frequency(MHz)

    :0

  • Max Frequency(MHz)

    :6000

  • Peak Output Power(W)

    :30

  • Gain(dB)

    :18.0

  • Efficiency(%)

    :33

  • Operating Voltage(V)

    :28

  • Form

    :Packaged Discrete Transistor

  • Package Category

    :Flange

  • Technology

    :GaN-on-SiC

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