CGH27030F中文资料30-W, DC – 6.0-GHz, 28-V, GaN HEMT数据手册MACOM规格书

描述 Description

The CGH27030 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically for high-efficiency; high-gain and wide-bandwidth capabilities; which makes the CGH27030 ideal for VHF; Comms; 3G; 4G; LTE; 2.3-2.9GHz WiMAX and BWA amplifier applications. The transistor is available in screw-down flange; solder-down pill packages; and a 3mm x 4mm; surface mount; dual-flat-no-lead (DFN) package.                                                                         Note: CGH27030F/P are Not Recommended for New Designs. Refer to CG2H40025F. 

特性 Features

• VHF – 3.0 GHz Operation
• 30 W Peak Power Capability
• > 15 dB Small Signal Gain
• > 28% Drain Efficiency

应用 Application

• VHF; Comms; 3G; 4G; LTE; 2.3-2.9 GHz WiMAX and BWA amplifier applications.