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CGH25120F中文资料120 W; 2300 - 2700 MHz; GaN HEMT for WiMAX and LTE数据手册MACOM规格书

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厂商型号

CGH25120F

参数属性

CGH25120F 封装/外壳为440162;包装为托盘;类别为分立半导体产品的晶体管-FETMOSFET-射频;产品描述:120W GAN HEMT 28V 2.5-2.7GHZ FET

功能描述

120 W; 2300 - 2700 MHz; GaN HEMT for WiMAX and LTE

封装外壳

440162

制造商

MACOM Tyco Electronics

数据手册

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更新时间

2025-9-23 11:10:00

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CGH25120F价格和库存,欢迎联系客服免费人工找货

CGH25120F规格书详情

描述 Description

The CGH25120F is a gallium-nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency; high gain and wide bandwidth capabilities; which makes the CGH25120F ideal for 2.3-2.7GHz WiMAX; LTE and BWA amplifier applications. The transistor is supplied in a ceramic/metal flange package.

特性 Features

·2.3 – 2.7 GHz Operation
·13 dB Gain
·-32 dBc ACLR at 20 W PAVE
·30 % Efficiency at 20 W PAVE
·High Degree of DPD Correction Can be Applied

应用 Application

·MC-GSM, WCDMA and LTE Amplifiers

技术参数

  • 制造商编号

    :CGH25120F

  • 生产厂家

    :MACOM

  • Min Frequency(MHz)

    :2500

  • Max Frequency(MHz)

    :2700

  • Peak Output Power(W)

    :120

  • Gain(dB)

    :7.0

  • Efficiency(%)

    :30

  • Operating Voltage(V)

    :28

  • Form

    :Packaged Discrete Transistor

  • Package Category

    :Flange

  • Technology

    :GaN-on-SiC

供应商 型号 品牌 批号 封装 库存 备注 价格
CREE/科锐
23+
20
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
24+
N/A
46000
一级代理-主营优势-实惠价格-不悔选择
询价
CREE
2308+
原厂原包
6850
十年专业专注 优势渠道商正品保证
询价
CREE/科锐
23+
6000
专注配单,只做原装进口现货
询价
CREE/科锐
2447
20
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
CREE
24+
SMD
1680
一级代理原装进口现货
询价
Cree/Wolfspeed
22+
9000
原厂渠道,现货配单
询价
CREE
24+
N/A
90000
进口原装现货假一罚十价格合理
询价
CREE/科锐
25+
T0-59
3000
全新原装现货销售
询价
Wolfspeed
25+
Tube
4430
郑重承诺只做原装进口现货
询价