CGH25120F中文资料120 W; 2300 - 2700 MHz; GaN HEMT for WiMAX and LTE数据手册MACOM规格书
CGH25120F规格书详情
描述 Description
The CGH25120F is a gallium-nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency; high gain and wide bandwidth capabilities; which makes the CGH25120F ideal for 2.3-2.7GHz WiMAX; LTE and BWA amplifier applications. The transistor is supplied in a ceramic/metal flange package.
特性 Features
·2.3 – 2.7 GHz Operation
·13 dB Gain
·-32 dBc ACLR at 20 W PAVE
·30 % Efficiency at 20 W PAVE
·High Degree of DPD Correction Can be Applied
应用 Application
·MC-GSM, WCDMA and LTE Amplifiers
技术参数
- 制造商编号
:CGH25120F
- 生产厂家
:MACOM
- Min Frequency(MHz)
:2500
- Max Frequency(MHz)
:2700
- Peak Output Power(W)
:120
- Gain(dB)
:7.0
- Efficiency(%)
:30
- Operating Voltage(V)
:28
- Form
:Packaged Discrete Transistor
- Package Category
:Flange
- Technology
:GaN-on-SiC
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
CREE/科锐 |
23+ |
20 |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
24+ |
N/A |
46000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 | |||
CREE |
2308+ |
原厂原包 |
6850 |
十年专业专注 优势渠道商正品保证 |
询价 | ||
CREE/科锐 |
23+ |
6000 |
专注配单,只做原装进口现货 |
询价 | |||
CREE/科锐 |
2447 |
20 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
CREE |
24+ |
SMD |
1680 |
一级代理原装进口现货 |
询价 | ||
Cree/Wolfspeed |
22+ |
9000 |
原厂渠道,现货配单 |
询价 | |||
CREE |
24+ |
N/A |
90000 |
进口原装现货假一罚十价格合理 |
询价 | ||
CREE/科锐 |
25+ |
T0-59 |
3000 |
全新原装现货销售 |
询价 | ||
Wolfspeed |
25+ |
Tube |
4430 |
郑重承诺只做原装进口现货 |
询价 |