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CGH27030S数据手册分立半导体产品的晶体管-FETMOSFET-射频规格书PDF

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厂商型号

CGH27030S

参数属性

CGH27030S 封装/外壳为12-VFDFN 裸露焊盘;包装为托盘;类别为分立半导体产品的晶体管-FETMOSFET-射频;产品描述:RF MOSFET HEMT 28V 12DFN

功能描述

30-W, DC – 6.0-GHz, 28-V, GaN HEMT

封装外壳

12-VFDFN 裸露焊盘

制造商

MACOM Tyco Electronics

中文名称

玛科姆技术方案控股有限公司

数据手册

下载地址下载地址二

更新时间

2025-8-6 20:10:00

人工找货

CGH27030S价格和库存,欢迎联系客服免费人工找货

CGH27030S规格书详情

描述 Description

The CGH27030 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically for high-efficiency; high-gain and wide-bandwidth capabilities; which makes the CGH27030 ideal for VHF; Comms; 3G; 4G; LTE; 2.3-2.9GHz WiMAX and BWA amplifier applications. The transistor is available in screw-down flange; solder-down pill packages; and a 3mm x 4mm; surface mount; dual-flat-no-lead (DFN) package.                                                                         Note: CGH27030F/P are Not Recommended for New Designs. Refer to CG2H40025F. 

特性 Features

• VHF – 3.0 GHz Operation
• 30 W Peak Power Capability
• > 15 dB Small Signal Gain
• > 28% Drain Efficiency

应用 Application

• VHF; Comms; 3G; 4G; LTE; 2.3-2.9 GHz WiMAX and BWA amplifier applications.

技术参数

  • 制造商编号

    :CGH27030S

  • 生产厂家

    :MACOM

  • Min Frequency(MHz)

    :0

  • Max Frequency(MHz)

    :6000

  • Peak Output Power(W)

    :30

  • Gain(dB)

    :18.0

  • Efficiency(%)

    :33

  • Operating Voltage(V)

    :28

  • Form

    :Packaged Discrete Transistor

  • Package Category

    :Flange

  • Technology

    :GaN-on-SiC

供应商 型号 品牌 批号 封装 库存 备注 价格
CORNELLDUBILIER-CDE
2020+
Bulk
880000
明嘉莱只做原装正品现货
询价
IRC
2450+
SOP
6540
只做原厂原装正品终端客户免费申请样品
询价
ZTE
23+
原厂原封□□□
20000
原厂授权代理分销现货只做原装正迈科技样品支持现货
询价
CDE
23+
63.5X92.75
53690
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
CREE
638
原装正品
询价
Wolfspeed Inc.
25+
12-VFDFN 裸露焊盘
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
CREE
24+
SMD
1680
一级代理原装进口现货
询价
Cornell-Dubilier
38
全新原装 货期两周
询价
Wolfspeed
25+
Tube
4430
郑重承诺只做原装进口现货
询价
Cree/Wolfspeed
22+
12DFN (4x3)
9000
原厂渠道,现货配单
询价