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CGH35060P2数据手册MACOM中文资料规格书
CGH35060P2规格书详情
描述 Description
The CGH35060P2 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically for high-efficiency; high-gain and wide-bandwidth capabilities; which makes the CGH35060P2 ideal for 3.1 - 3.5-GHz; S-band; pulsed-amplifier applications. The transistor is supplied in a ceramic/metal flange and pill package.
特性 Features
·3.1 – 3.5 GHz Operation
·60 W Peak Power Capability
·12 dB Small Signal Gain
·60% Drain Efficiency
应用 Application
·Test Instrumentation
·Cellular Infrastructure
·Broadband Amplifiers
·2-Way Private Radio
·Class A, AB
·Linear amplifiers suitable for OFDM, W-CDMA, EDGE, CDMA waveforms
技术参数
- 制造商编号
：CGH35060P2
- 生产厂家
：MACOM
- Min Frequency(MHz)
：3100
- Max Frequency(MHz)
：3500
- Peak Output Power(W)
：60
- Gain(dB)
：12.0
- Efficiency(%)
：60
- Operating Voltage(V)
：28
- Form
：Packaged Discrete Transistor
- Package Category
：Flange
- Technology
：GaN-on-SiC
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CORNELLDUBILIER-CDE |
21+ |
Bulk |
880000 |
明嘉莱只做原装正品现货 |
询价 | ||
CREE(科锐) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
询价 | ||
CREE |
24+ |
N/A |
39500 |
进口原装现货 支持实单价优 |
询价 | ||
CORNELLDUBILIER-CDE |
23+ |
Bulk |
73556 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
最新 |
2000 |
原装正品现货 |
询价 | ||||
CREE |
24+ |
SMD |
1680 |
一级代理原装进口现货 |
询价 | ||
CREE |
1002 |
25 |
公司优势库存 热卖中! |
询价 | |||
Cornell-Dubilier |
新 |
7 |
全新原装 货期两周 |
询价 | |||
Wolfspeed |
25+ |
Tube |
4430 |
郑重承诺只做原装进口现货 |
询价 | ||
Cree/Wolfspeed |
22+ |
9000 |
原厂渠道,现货配单 |
询价 |
