CGH27060F数据手册分立半导体产品的晶体管-FETMOSFET-射频规格书PDF
| 厂商型号 |
CGH27060F |
| 参数属性 | CGH27060F 封装/外壳为440193；包装为卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带；类别为分立半导体产品的晶体管-FETMOSFET-射频；产品描述：RF MOSFET HEMT 28V 440193 |
| 功能描述 | 8 W (average); 28 V; GaN HEMT for linear communications ranging from VHF to 3 GHz |
| 封装外壳 | 440193 |
| 制造商 | MACOM Tyco Electronics |
| 中文名称 | 玛科姆技术方案控股有限公司 |
| 数据手册 | |
| 更新时间 | 2025-8-7 17:18:00 |
| 人工找货 | CGH27060F价格和库存，欢迎联系客服免费人工找货 |
CGH27060F规格书详情
描述 Description
Note: CGH27060F is Not Recommended for New Designs. Refer to CG2H40045F. The CGH27060F is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically for high-efficiency; high-gain and wide-bandwidth capabilities; which makes the CGH27060F ideal for VHF; Comms; 3G; 4G; LTE; 2.3 - 2.9 GHz WiMAX and BWA amplifier applications. The unmatched transistor is supplied in a ceramic/metal flange package.
特性 Features
·VHF – 3.0 GHz Operation
·14 dB Small Signal Gain
·8.0 W PAVE at < 2.0% EVM
·27% Drain Efficiency at 8 W Average Power
应用 Application
·Communications
·2.3-2.9 GHz WiMAX and BWA amplifiers
·3G, 4G, LTE
·VHF
技术参数
- 制造商编号
：CGH27060F
- 生产厂家
：MACOM
- Min Frequency(MHz)
：0
- Max Frequency(MHz)
：4000
- Peak Output Power(W)
：60
- Gain(dB)
：14.0
- Efficiency(%)
：27
- Operating Voltage(V)
：28
- Form
：Packaged Discrete Transistor
- Package Category
：Flange
- Technology
：GaN-on-SiC
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CREE |
24+ |
SMD |
1680 |
一级代理原装进口现货 |
询价 | ||
IRC |
2450+ |
SOP |
6540 |
只做原厂原装正品终端客户免费申请样品 |
询价 | ||
CORNELLDUBILIER-CDE |
2020+ |
Bulk |
880000 |
明嘉莱只做原装正品现货 |
询价 | ||
CREE |
24+ |
N/A |
90000 |
进口原装现货假一罚十价格合理 |
询价 | ||
CREE |
638 |
原装正品 |
询价 | ||||
CDE |
23+ |
63.5X92.75 |
53690 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
Cornell-Dubilier |
新 |
38 |
全新原装 货期两周 |
询价 | |||
Wolfspeed |
25+ |
Tube |
4430 |
郑重承诺只做原装进口现货 |
询价 | ||
Cree/Wolfspeed |
22+ |
9000 |
原厂渠道,现货配单 |
询价 | |||
Cree/Wolfspeed |
2022+ |
440193 |
38550 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 |
