CGH40006S数据手册分立半导体产品的晶体管-FETMOSFET-射频规格书PDF
| 厂商型号 |
CGH40006S |
| 参数属性 | CGH40006S 封装/外壳为6-VDFN 裸露焊盘；包装为卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带；类别为分立半导体产品的晶体管-FETMOSFET-射频；产品描述：RF MOSFET HEMT 28V 6QFN |
| 功能描述 | 6 W, RF Power GaN HEMT, Plastic |
| 封装外壳 | 6-VDFN 裸露焊盘 |
| 制造商 | MACOM Tyco Electronics |
| 中文名称 | 玛科姆技术方案控股有限公司 |
| 数据手册 | |
| 更新时间 | 2025-8-7 10:14:00 |
| 人工找货 | CGH40006S价格和库存，欢迎联系客服免费人工找货 |
CGH40006S规格书详情
描述 Description
The CGH40006 is an unmatched; gallium-nitride (GaN) high-electron-mobility transistor (HEMT). The CGH40006; operating from a 28-volt rail; offers a general-purpose; broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency; high gain and wide bandwidth capabilities; making the CGH40006 ideal for linear and compressed amplifier circuits. The transistor is available in a solder-down pill package and a 3-mm x 3-mm; surface-mount; dual-flat-no-lead package.
特性 Features
·Up to 6 GHz Operation
·13 dB Small Signal Gain at 2.0 GHz
·11 dB Small Signal Gain at 6.0 GHz
·8 W typical at PIN = 32 dBm
·28 V Operation
应用 Application
·Cellular Infrastructure
·Broadband Amplifiers
·2-Way Private Radio
·Class A, AB
·OFDM; W-CDMA; EDGE; CDMA waveforms
技术参数
- 制造商编号
：CGH40006S
- 生产厂家
：MACOM
- Min Frequency(MHz)
：0
- Max Frequency(MHz)
：6000
- Peak Output Power(W)
：6
- Gain(dB)
：11.0
- Efficiency(%)
：65
- Operating Voltage(V)
：28
- Form
：Packaged Discrete Transistor
- Package Category
：Pill
- Technology
：GaN-on-SiC
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CREE |
25+23+ |
BGA |
21782 |
绝对原装正品全新进口深圳现货 |
询价 | ||
Cree |
22+ |
NA |
1400 |
加我QQ或微信咨询更多详细信息, |
询价 | ||
MACOM |
24+ |
5000 |
原装军类可排单 |
询价 | |||
CREE/科锐 |
专业军工 |
NA |
1000 |
只做原装正品军工级部分订货 |
询价 | ||
CREE |
三年内 |
1983 |
只做原装正品 |
询价 | |||
Cree |
500 |
询价 | |||||
CREE |
638 |
原装正品 |
询价 | ||||
CREE |
23+ |
2505 |
原厂原装正品 |
询价 | |||
CREE |
24+ |
N/A |
90000 |
进口原装现货假一罚十价格合理 |
询价 | ||
CREE |
22+ |
Tray |
1000 |
公司现货,有挂就有货。 |
询价 |
