CGH40025数据手册开发板套件编程器的射频评估开发套件开发板规格书PDF

描述 Description

Note: CGH40025F/P are Not Recommended for New Designs. Refer to CG2H40025F/P. The CGH40025 is an unmatched; gallium-nitride (GaN) high-electron-mobility transistor (HEMT). The CGH40025; operating from a 28-volt rail; offers a general-purpose; broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency; high gain and wide bandwidth capabilities; making the CGH40025 ideal for linear and compressed amplifier circuits. The transistor is available in a screw-down; flange package and solder-down pill packages.

特性 Features

·Up to 6 GHz Operation
·15 dB Small Signal Gain at 2.0 GHz
·13 dB Small Signal Gain at 4.0 GHz
·30 W typical PSAT
·62% Efficiency at PSAT
·28 V Operation

应用 Application

·Multi-carrier DOCSIS Applications
·WiMAX Fixed Access 802.16-2004 OFDM