CGH55030中文资料30 W; 5500 - 5800 MHz; 28 V; GaN HEMT for WiMAX数据手册MACOM规格书
CGH55030规格书详情
描述 Description
The CGH55030F1/CGH55030P1 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically for high-efficiency; high-gain and wide-bandwidth capabilities; which makes the CGH55030F1/CGH55030P1 ideal for 5.5 - 5.8-GHz WiMAX and BWA amplifier applications. The transistor is available in both screw-down flange and solder-down pill packages. Based on appropriate external match adjustment; the CGH55030F1/CGH55030P1 is suitable for 4.9 - 5.5-GHz applications as well.
特性 Features
·300 MHz Instantaneous Bandwidth
·30 W Peak Power Capability
·10 dB Small Signal Gain
·4 W PAVE < 2.0% EVM
·25% Efficiency at 4 W Average Power
应用 Application
·Multi-carrier DOCSIS Applications
·WiMAX Fixed Access 802.16-2004 OFDM
技术参数
- 制造商编号
：CGH55030
- 生产厂家
：MACOM
- Min Frequency(MHz)
：0
- Max Frequency(MHz)
：6000
- Peak Output Power(W)
：30
- Gain(dB)
：10.0
- Efficiency(%)
：25
- Operating Voltage(V)
：28
- Form
：Packaged Discrete Transistor
- Package Category
：Flange
- Technology
：GaN-on-SiC
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
24+ |
SMD |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
询价 | |||
IRC |
2450+ |
SOP |
6540 |
只做原厂原装正品终端客户免费申请样品 |
询价 | ||
CREE |
638 |
原装正品 |
询价 | ||||
CORNELLDUBILIER-CDE |
25+ |
Bulk |
880000 |
明嘉莱只做原装正品现货 |
询价 | ||
CREE |
1146 |
13 |
公司优势库存 热卖中! |
询价 | |||
CREE |
18+ |
N/A |
85600 |
保证进口原装可开17%增值税发票 |
询价 | ||
Cree/Wolfspeed |
23+ |
9000 |
原装正品，支持实单 |
询价 | |||
CREE |
24+ |
N/A |
90000 |
进口原装现货假一罚十价格合理 |
询价 | ||
CREE/科锐 |
2447 |
20 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
Cree/Wolfspeed |
2022+ |
440166 |
38550 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 |
