首页>CGH55015>规格书详情

CGH55015数据手册分立半导体产品的晶体管-FETMOSFET-射频规格书PDF

PDF无图
厂商型号

CGH55015

参数属性

CGH55015 封装/外壳为440166;包装为卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带;类别为分立半导体产品的晶体管-FETMOSFET-射频;产品描述:RF MOSFET HEMT 28V 440166

功能描述

10 W; C - band; Unmatched; GaN HEMT

封装外壳

440166

制造商

MACOM Tyco Electronics

中文名称

玛科姆技术方案控股有限公司

数据手册

下载地址下载地址二

更新时间

2025-8-6 20:10:00

人工找货

CGH55015价格和库存,欢迎联系客服免费人工找货

CGH55015规格书详情

描述 Description

Note: CGH55015P2 is Not Recommended for New Designs. Refer to CCG2H40010P. The CGH55015F2/CGH55015P2 is a gallium-nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency; high gain and wide bandwidth capabilities; which makes the CGH55015F2/ CGH55015P2 ideal for C-band pulsed or CW saturated amplifiers. The transistor is available in both screw-down; flange and solder-down; pill packages. Based on appropriate external match adjustment; the CGH55015F2/CGH55015P2 is suitable for applications up to 6 GHz.

特性 Features

·4.5 to 6.0 GHz Operation
·12 dB Small Signal Gain at 5.65 GHz
·13 W typical PSAT
·60% Efficiency at PSAT
·28 V Operation

应用 Application

·Test Instrumentation
·Cellular Infrastructure
·Broadband Amplifiers
·2-Way Private Radio
·Class A, AB
·OFDM; W-CDMA; EDGE; CDMA waveforms

技术参数

  • 制造商编号

    :CGH55015

  • 生产厂家

    :MACOM

  • Min Frequency(MHz)

    :0

  • Max Frequency(MHz)

    :6000

  • Peak Output Power(W)

    :10

  • Gain(dB)

    :12.0

  • Efficiency(%)

    :60

  • Operating Voltage(V)

    :28

  • Form

    :Packaged Discrete Transistor

  • Package Category

    :Flange

  • Technology

    :GaN-on-SiC

供应商 型号 品牌 批号 封装 库存 备注 价格
CREE
16+
MOSFET
880000
明嘉莱只做原装正品现货
询价
24+
SMD
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
询价
CREE
2450+
MOSFET
8850
只做原装正品假一赔十为客户做到零风险!!
询价
CREE/科锐
23+
NA
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
CREE
638
原装正品
询价
Wolfspeed Inc.
25+
440196
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
CREE
24+
SMD
1680
一级代理原装进口现货
询价
CREE
1146
13
公司优势库存 热卖中!
询价
Wolfspeed
25+
Tube
4430
郑重承诺只做原装进口现货
询价
Cree/Wolfspeed
22+
9000
原厂渠道,现货配单
询价