CGH55015中文资料10 W; C - band; Unmatched; GaN HEMT数据手册MACOM规格书
CGH55015规格书详情
描述 Description
Note: CGH55015P2 is Not Recommended for New Designs. Refer to CCG2H40010P. The CGH55015F2/CGH55015P2 is a gallium-nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency; high gain and wide bandwidth capabilities; which makes the CGH55015F2/ CGH55015P2 ideal for C-band pulsed or CW saturated amplifiers. The transistor is available in both screw-down; flange and solder-down; pill packages. Based on appropriate external match adjustment; the CGH55015F2/CGH55015P2 is suitable for applications up to 6 GHz.
特性 Features
·4.5 to 6.0 GHz Operation
·12 dB Small Signal Gain at 5.65 GHz
·13 W typical PSAT
·60% Efficiency at PSAT
·28 V Operation
应用 Application
·Test Instrumentation
·Cellular Infrastructure
·Broadband Amplifiers
·2-Way Private Radio
·Class A, AB
·OFDM; W-CDMA; EDGE; CDMA waveforms
技术参数
- 制造商编号
：CGH55015
- 生产厂家
：MACOM
- Min Frequency(MHz)
：0
- Max Frequency(MHz)
：6000
- Peak Output Power(W)
：10
- Gain(dB)
：12.0
- Efficiency(%)
：60
- Operating Voltage(V)
：28
- Form
：Packaged Discrete Transistor
- Package Category
：Flange
- Technology
：GaN-on-SiC
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
24+ |
SMD |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
询价 | |||
CREE |
2450+ |
MOSFET |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
询价 | ||
CREE |
638 |
原装正品 |
询价 | ||||
CREE |
16+ |
MOSFET |
880000 |
明嘉莱只做原装正品现货 |
询价 | ||
CREE |
1146 |
13 |
公司优势库存 热卖中! |
询价 | |||
Wolfspeed |
25+ |
Tube |
4430 |
郑重承诺只做原装进口现货 |
询价 | ||
CREE/科锐 |
23+ |
TO-59 |
8510 |
原装正品代理渠道价格优势 |
询价 | ||
Cree/Wolfspeed |
23+ |
9000 |
原装正品，支持实单 |
询价 | |||
CREE |
24+ |
N/A |
90000 |
进口原装现货假一罚十价格合理 |
询价 | ||
CREE/科锐 |
2447 |
20 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 |
