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CGH40120F-AMP中文资料120 W RF Power GaN HEMT数据手册MACOM规格书
CGH40120F-AMP规格书详情
描述 Description
Note: CGH40120F is Not Recommended for New Designs. Refer to CCG2H40120F. The CGH40120 is an unmatched; gallium-nitride (GaN); high-electron-mobility transistor (HEMT). The CGH40120; operating from a 28-volt rail; offers a general-purpose; broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency; high gain and wide bandwidth capabilities; making the CGH40120 ideal for linear and compressed amplifier circuits. The transistor is available in a metal-ceramic pill and flange package.
特性 Features
·Up to 2.5 GHz Operation
·20 dB Small Signal Gain at 1.0 GHz
·15 dB Small Signal Gain at 2.0 GHz
·120 W Typical PSAT
·70% Efficiency at PSAT
·28 V Operation
应用 Application
·Test Instrumentation
·Cellular Infrastructure
·Broadband Amplifiers
·2-Way Private Radio
·Class A, AB
·Linear amplifiers suitable for OFDM, W-CDMA, EDGE, CDMA waveforms
技术参数
- 制造商编号
：CGH40120F-AMP
- 生产厂家
：MACOM
- Min Frequency(MHz)
：0
- Max Frequency(MHz)
：3000
- Peak Output Power(W)
：120
- Gain(dB)
：15.0
- Efficiency(%)
：70
- Operating Voltage(V)
：28
- Form
：Packaged Discrete Transistor
- Package Category
：Flange
- Technology
：GaN-on-SiC
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CORNELLDUBILIER-CDE |
25+ |
Bulk |
880000 |
明嘉莱只做原装正品现货 |
询价 | ||
Cree |
25+23+ |
BGA |
19489 |
绝对原装正品全新进口深圳现货 |
询价 | ||
CREE |
23+ |
N/A |
10065 |
原装正品,有挂有货,假一赔十 |
询价 | ||
CREE |
2023+ |
RFMOSFET |
6853 |
十五年行业诚信经营,专注全新正品 |
询价 | ||
CREE/科锐 |
24+ |
SMD |
15448 |
郑重承诺只做原装进口现货 |
询价 | ||
CREE |
24+ |
SMD |
1680 |
一级代理原装进口现货 |
询价 | ||
CREE |
24+ |
NA/ |
100 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
CREE |
18+ |
SMD |
85600 |
保证进口原装可开17%增值税发票 |
询价 | ||
CREE |
638 |
原装正品 |
询价 | ||||
CREE/科锐 |
2447 |
20 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 |
