CGH40120F数据手册分立半导体产品的晶体管-FETMOSFET-射频规格书PDF
CGH40120F规格书详情
描述 Description
Note: CGH40120F is Not Recommended for New Designs. Refer to CCG2H40120F. The CGH40120 is an unmatched; gallium-nitride (GaN); high-electron-mobility transistor (HEMT). The CGH40120; operating from a 28-volt rail; offers a general-purpose; broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency; high gain and wide bandwidth capabilities; making the CGH40120 ideal for linear and compressed amplifier circuits. The transistor is available in a metal-ceramic pill and flange package.
特性 Features
·Up to 2.5 GHz Operation
·20 dB Small Signal Gain at 1.0 GHz
·15 dB Small Signal Gain at 2.0 GHz
·120 W Typical PSAT
·70% Efficiency at PSAT
·28 V Operation
应用 Application
·Test Instrumentation
·Cellular Infrastructure
·Broadband Amplifiers
·2-Way Private Radio
·Class A, AB
·Linear amplifiers suitable for OFDM, W-CDMA, EDGE, CDMA waveforms
技术参数
- 制造商编号
：CGH40120F
- 生产厂家
：MACOM
- Min Frequency(MHz)
：0
- Max Frequency(MHz)
：3000
- Peak Output Power(W)
：120
- Gain(dB)
：15.0
- Efficiency(%)
：70
- Operating Voltage(V)
：28
- Form
：Packaged Discrete Transistor
- Package Category
：Flange
- Technology
：GaN-on-SiC
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CREE |
三年内 |
1983 |
只做原装正品 |
询价 | |||
CREE |
19+ |
SMD |
2 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
CREE(科锐) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
询价 | ||
CREE |
24+ |
VQFN |
7850 |
只做原装正品现货或订货假一赔十! |
询价 | ||
CREE |
23+ |
2539 |
原厂原装正品 |
询价 | |||
CREE(科锐) |
24+ |
N/A |
37048 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
询价 | ||
Cree |
25+23+ |
BGA |
19488 |
绝对原装正品全新进口深圳现货 |
询价 | ||
CREE |
638 |
原装正品 |
询价 | ||||
CREE |
24+ |
SMD |
500 |
“芯达集团”专营军工百分之百原装进口 |
询价 | ||
CREE |
24+ |
N/A |
11000 |
原装正品 有挂有货 假一赔十 |
询价 |
