120 W, RF Power GaN HEMT

Description Cree’s CGH40120F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40120F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain an

文件：1.5883 Mbytes 页数：13 Pages

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120 W, RF Power GaN HEMT

文件：1.21044 Mbytes 页数：13 Pages

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科锐

120 W, RF Power GaN HEMT

文件：1.21044 Mbytes 页数：13 Pages

CREE

科锐

120 W, RF Power GaN HEMT

文件：1.21044 Mbytes 页数：13 Pages

CREE

科锐

120 W RF Power GaN HEMT

Note: CGH40120F is Not Recommended for New Designs. Refer to CCG2H40120F. The CGH40120 is an unmatched; gallium-nitride (GaN); high-electron-mobility transistor (HEMT). The CGH40120; operating from a 28-volt rail; offers a general-purpose; broadband solution to a variety of RF and microwave applicat ·Up to 2.5 GHz Operation\n·20 dB Small Signal Gain at 1.0 GHz\n·15 dB Small Signal Gain at 2.0 GHz\n·120 W Typical PSAT\n·70% Efficiency at PSAT\n·28 V Operation;

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Package：440193；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：RF MOSFET HEMT 28V 440193

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120 W RF Power GaN HEMT

Note: CGH40120F is Not Recommended for New Designs. Refer to CCG2H40120F. The CGH40120 is an unmatched; gallium-nitride (GaN); high-electron-mobility transistor (HEMT). The CGH40120; operating from a 28-volt rail; offers a general-purpose; broadband solution to a variety of RF and microwave applicat ·Up to 2.5 GHz Operation\n·20 dB Small Signal Gain at 1.0 GHz\n·15 dB Small Signal Gain at 2.0 GHz\n·120 W Typical PSAT\n·70% Efficiency at PSAT\n·28 V Operation;

MACOM

包装：散装 类别：开发板，套件，编程器 射频评估和开发套件，开发板 描述：CGH40120F DEV BOARD WITH HEMT

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包装：散装 类别：开发板，套件，编程器 射频评估和开发套件，开发板 描述：BOARD DEMO AMP CIRCUIT CGH40120

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