CGH40120F分立半导体产品的晶体管-FETMOSFET-射频规格书PDF中文资料

CGH40120F属于分立半导体产品的晶体管-FETMOSFET-射频。由WOLFSPEED, INC.制造生产的CGH40120F晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。

描述 Description

Cree’s CGH40120F is an unmatched, gallium nitride (GaN) high

electron mobility transistor (HEMT). The CGH40120F, operating

from a 28 volt rail, offers a general purpose, broadband solution

to a variety of RF and microwave applications. GaN HEMTs offer

high efficiency, high gain and wide bandwidth capabilities making

the CGH40120F ideal for linear and compressed amplifier circuits.

The transistor is available in a flange package. Package Types: 440193

PN: CGH40120F

特性 Features

• Up to 2.5 GHz Operation

• 20 dB Small Signal Gain at 1.0 GHz

• 15 dB Small Signal Gain at 2.0 GHz

• 120 W Typical PSAT

• 70 Efficiency at PSAT

• 28 V Operation

Applications

• 2-Way Private Radio

• Broadband Amplifiers

• Cellular Infrastructure

• Test Instrumentation

• Class A, AB, Linear amplifiers suitable for OFDM,

W-CDMA, EDGE, CDMA waveforms