CGH40035数据手册开发板套件编程器的射频评估开发套件开发板规格书PDF
CGH40035规格书详情
描述 Description
The CGH40035F is an unmatched; gallium-nitride (GaN) high-electron-mobility transistor (HEMT). The CGH40035F, operating from a 28-volt rail, offers a general-purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities; making the CGH40035F ideal for linear and compressed amplifier circuits. The transistor is available in a screw-down flange package. Note: CGH40035F is Not Recommended for New Designs. Refer to CCG2H40035F.
特性 Features
·Up to 4 GHz Operation
·15 dB Small Signal Gain at 2.0 GHz
·13 dB Small Signal Gain at 4.0 GHz
·45 W typical PSAT
·60 % Efficiency at PSAT
·28 V Operation
应用 Application
·Test Instrumentation
·Cellular Infrastructure
·Broadband Amplifiers
·2-Way Private Radio
·Class A, AB
·Linear amplifiers suitable for OFDM, W-CDMA, EDGE, CDMA waveforms
技术参数
- 制造商编号
：CGH40035
- 生产厂家
：MACOM
- Min Frequency(MHz)
：0
- Max Frequency(MHz)
：6000
- Peak Output Power(W)
：35
- Gain(dB)
：13.0
- Efficiency(%)
：60
- Operating Voltage(V)
：28
- Form
：Packaged Discrete Transistor
- Package Category
：Flange
- Technology
：GaN-on-SiC
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CREE/科锐 |
专业军工 |
NA |
1000 |
只做原装正品军工级部分订货 |
询价 | ||
CREE |
三年内 |
1983 |
只做原装正品 |
询价 | |||
Cree |
200 |
询价 | |||||
CREE |
638 |
原装正品 |
询价 | ||||
CREE |
24+ |
N/A |
90000 |
进口原装现货假一罚十价格合理 |
询价 | ||
CREE |
23+ |
NA |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
CREE(科锐) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
询价 | ||
CREE |
2023+ |
DQ |
8700 |
原装现货 |
询价 | ||
Cree/Wolfspeed |
22+ |
9000 |
原厂渠道,现货配单 |
询价 | |||
CREE |
23+ |
TUBE |
5000 |
公司只做原装,可配单 |
询价 |
