CGH40035中文资料35 W RF Power GaN HEMT数据手册MACOM规格书
CGH40035规格书详情
描述 Description
The CGH40035F is an unmatched; gallium-nitride (GaN) high-electron-mobility transistor (HEMT). The CGH40035F, operating from a 28-volt rail, offers a general-purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities; making the CGH40035F ideal for linear and compressed amplifier circuits. The transistor is available in a screw-down flange package. Note: CGH40035F is Not Recommended for New Designs. Refer to CCG2H40035F.
特性 Features
·Up to 4 GHz Operation
·15 dB Small Signal Gain at 2.0 GHz
·13 dB Small Signal Gain at 4.0 GHz
·45 W typical PSAT
·60 % Efficiency at PSAT
·28 V Operation
应用 Application
·Test Instrumentation
·Cellular Infrastructure
·Broadband Amplifiers
·2-Way Private Radio
·Class A, AB
·Linear amplifiers suitable for OFDM, W-CDMA, EDGE, CDMA waveforms
技术参数
- 制造商编号
：CGH40035
- 生产厂家
：MACOM
- Min Frequency(MHz)
：0
- Max Frequency(MHz)
：6000
- Peak Output Power(W)
：35
- Gain(dB)
：13.0
- Efficiency(%)
：60
- Operating Voltage(V)
：28
- Form
：Packaged Discrete Transistor
- Package Category
：Flange
- Technology
：GaN-on-SiC
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CREE |
24+ |
SMD |
1680 |
一级代理原装进口现货 |
询价 | ||
CREE |
24+ |
N/A |
18000 |
原装正品 有挂有货 假一赔十 |
询价 | ||
CREE |
三年内 |
1983 |
只做原装正品 |
询价 | |||
CREE |
638 |
原装正品 |
询价 | ||||
Cree |
2023+ |
5800 |
进口原装,现货热卖 |
询价 | |||
CREE |
2308+ |
原厂原包 |
6850 |
十年专业专注 优势渠道商正品保证 |
询价 | ||
CREE(科锐) |
22+ |
N/A |
3206 |
原装正品物料 |
询价 | ||
Cree/Wolfspeed |
23+ |
9000 |
原装正品，支持实单 |
询价 | |||
FREESCALE |
24+ |
TO-59 |
210 |
价格优势 |
询价 | ||
CREE |
24+ |
N/A |
90000 |
进口原装现货假一罚十价格合理 |
询价 |
