8 W; 6.0 GHz; GaN HEMT Die

The CGH60008D is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity; and higher thermal conductivity. GaN HEMTs offer greater power density ·8 W Typical PSAT @ 28 V Operation\n·5 W Typical PSAT @ 20 V Operation\n·High Breakdown Voltage\n·High Temperature Operation\n·Up to 6 GHz Operation\n·High Efficiency;

MACOM

Package：模具；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：RF MOSFET HEMT 28V DIE

WOLFSPEED

模块

Cree

科锐

上传：深圳市欧特拉科技有限公司

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MACOM

上传：深圳市达恩科技有限公司

NA

MACOM

上传：深圳市达恩科技有限公司