N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 50A ,RDS(ON) = 17mΩ (typ) @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

文件：391.29 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 50A ,RDS(ON) = 22mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. Lead free product is acquired.

文件：636.35 Kbytes 页数：4 Pages

CET-MOS

华瑞

50A,60V Heatsink Planar N-Channel Power MOSFET

General Description This N-channel enhancement mode field-effect power transistor using THINKI Semiconductor advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. The TO-220M

文件：1.4536 Mbytes 页数：6 Pages

THINKISEMI

思祁半导体

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 55A ,RDS(ON) = 20mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RoHS compliant.

文件：587.93 Kbytes 页数：5 Pages

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 50A, RDS(ON) = 30mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. Lead free product is acquired.

文件：642.37 Kbytes 页数：4 Pages

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 100V, 50A, RDS(ON) = 30mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ TO-220 & TO-263 package. ■ Lead free product is acquired.

文件：430.82 Kbytes 页数：4 Pages

CET

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -30V, -47A, RDS(ON) =20mΩ @VGS = -10V. RDS(ON) =32mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

文件：104.25 Kbytes 页数：4 Pages

CET

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -47A, RDS(ON) =20mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RDS(ON) =32mW @VGS = -4.5V. Lead free product is acquired.

文件：900.88 Kbytes 页数：4 Pages

CET-MOS

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -55V, -50A, RDS(ON) = 23mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RoHS compliant. RDS(ON) = 28mW @VGS = 4.5V.

文件：503.67 Kbytes 页数：4 Pages

CET-MOS

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -55V, -50A, RDS(ON) = 23mΩ @VGS = 10V. RDS(ON) = 28mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead-free plating ; RoHS compliant. ■ TO-220 & TO-263 package.

文件：683.38 Kbytes 页数：4 Pages

CET

华瑞