CEP6336

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■60V,28A,RDS(ON)=40mΩ@VGS=10V. RDS(ON)=50mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CEU6336

N-ChannelMOSFETusesadvancedtrenchtechnology

CEU6336

N-Channel60-V(D-S)MOSFET

CEU6336

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,25A,RDS(ON)=41mΩ@VGS=10V. RDS(ON)=55mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CHM6336JPT

N-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE60VoltsCURRENT5.8Ampere FEATURE *Smallflatpackage.(SO-8) *SuperhighdensecelldesignforextremelylowRDS(ON). *Highpowerandcurrenthandingcapability. *Leadfreeproductisacquired. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchi

CR6336

Primarysidecontrolhighprecisionconstantcurrent/constantvoltagePWMpowerswitch

features Constantvoltageandconstantcurrentcontrol Fullvoltageoutputvoltageaccuracycanreach±5 ±1InternalReference Built-inhighvoltageMOSFET Primarysidecontrolmode,noneedforTL431andoptocoupler FlybackTopologyinDiscontinuousMode Withsoftstartfunction frequency

E6336

SBE®320/SBX®350ConnectorsUpto550Amps

SBE®andSBX®connectorscanintegrateupto8auxiliarypower /signalcontactsalongwiththetwoprimarypowercircuits. Sequencingwithinauxiliarypositionsispossibleusingthe4pin lengthsavailableinthe1x4auxiliaryconnector.SBE®andSBX® offertouchsafehousings. •SilverPla

FT6336G

Self-CapacitiveTouchPanelController

HL6336G

CircularBeamLowOperatingCurrent

HL6336G

CircularBeamLowOperatingCurrent