CEP50N06

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■60V,50A,RDS(ON)=17mΩ(typ)@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CEP50N06

50A,60V Heatsink Planar N-Channel Power MOSFET

GeneralDescription ThisN-channelenhancementmodefield-effectpowertransistorusingTHINKISemiconductoradvancedplanarstripe,DMOStechnologyintendedforoff-lineswitchmodepowersupply.Also,especiallydesignedtominimizerds(on)andhighruggedavalanchecharacteristics.TheTO-220M

CEP50N06

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V,50A,RDS(ON)=22mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.

CEP50N06

N-Channel MOSFET uses advanced trench technology

CEP50N06

50A,60V Heatsink Planar N-Channel Power MOSFET;

CEP50N06

N Channel MOSFET;

CEP50N06G

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V,55A,RDS(ON)=20mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant.

CEP50N06G

N Channel MOSFET;