N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES • 30V, 60A, RDS(ON)=10mΩ @VGS=10V. RDS(ON)=15mΩ @VGS=4.5V. • Super high dense cell design for extremely low RDS(ON). • High power and curent handing capability. • TO-220 & TO-263 package.

文件：513.64 Kbytes 页数：5 Pages

CET

华瑞

N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 60A, RDS(ON) = 13.5mΩ @VGS = 10V. RDS(ON) = 18.5mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ TO-220 & TO-263 package.

文件：531.57 Kbytes 页数：5 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 55A, RDS(ON) = 11mΩ @VGS = 10V. RDS(ON) = 15mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

文件：121.59 Kbytes 页数：4 Pages

CET

华瑞

0.9 uA, High Precision Op Amps

Description The Microchip Technology Inc. MCP6031/2/3/4 family of operational amplifiers (op amps) operate with a single supply voltage as low as 1.8V, while drawing ultra low quiescent current per amplifier (0.9 µA, typical). This family also has low input offset voltage (±150 µV, maximum) and

文件：985.31 Kbytes 页数：30 Pages

MICROCHIP

微芯科技

0.9 uA, High Precision Op Amps

Description The Microchip Technology Inc. MCP6031/2/3/4 family of operational amplifiers (op amps) operate with a single supply voltage as low as 1.8V, while drawing ultra low quiescent current per amplifier (0.9 µA, typical). This family also has low input offset voltage (±150 µV, maximum) and

文件：985.31 Kbytes 页数：30 Pages

MICROCHIP

微芯科技