N-Channel Logic Level Enhancement Mode Field Effect Transistor

30V, 65A, RDS(ON) = 8mΩ @VGS=10V. RDS(ON) = 12mΩ @VGS=4.5V. Super high dense cell design for extremely low RDS(ON) High power and current handing capability. TO-220 & TO-263 package.

文件：515.73 Kbytes 页数：5 Pages

CET

华瑞

N-Channel Logic Level Enhancement Mode Field Effect Transistor

30V, 65A, RDS(ON) =  8mΩ @VGS=10V.\n             RDS(ON) = 12mΩ @VGS=4.5V.\nSuper high dense cell design for extremely low RDS(ON)\nHigh power and current handing capability.\nTO-220 & TO-263 package.

CET

华瑞

Current Sense Transformers

文件：173.36 Kbytes 页数：2 Pages

COILCRAFT

Power Inductors - Shielded

文件：248.47 Kbytes 页数：2 Pages

CT

Central Technologies

Low audible core noise

文件：247.15 Kbytes 页数：1 Pages

Toko