N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 87A, RDS(ON) = 12mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

文件：330.39 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 87A, RDS(ON) = 12mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. Lead free product is acquired.

文件：695.04 Kbytes 页数：4 Pages

CET-MOS

华瑞

N Channel MOSFET

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 75A, RDS(ON) = 13mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead-free plating ; RoHS compliant. ■ TO-220 & TO-263 package.

文件：424.43 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 75A, RDS(ON) = 13mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. Lead-free plating ; RoHS compliant.

文件：646.25 Kbytes 页数：4 Pages

CET-MOS

华瑞

N-Channel MOSFET uses advanced trench technology

文件：1.71031 Mbytes 页数：5 Pages

DOINGTER

杜因特

N Channel MOSFET

CET

华瑞