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CEP85A3

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■25V,90A,RDS(ON)=6mΩ@VGS=10V. RDS(ON)=9mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-263&TO-220package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CEP85A3

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 25V,90A,RDS(ON)=6mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-263&TO-220package. RDS(ON)=9mW@VGS=4.5V. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CEB85A3

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■25V,90A,RDS(ON)=6mΩ@VGS=10V. RDS(ON)=9mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-263&TO-220package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CEB85A3

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 25V,90A,RDS(ON)=6mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-263&TO-220package. RDS(ON)=9mW@VGS=4.5V. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CED85A3

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 25V,80A,RDS(ON)=6mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=9mW@VGS=4.5V. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CED85A3

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■25V,80A,RDS(ON)=6mΩ@VGS=10V. RDS(ON)=9mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CEU85A3

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 25V,80A,RDS(ON)=6mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=9mW@VGS=4.5V. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CEU85A3

N-ChannelEnhancementModeFieldEffectTransistor

CETChino-Excel Technology

华瑞华瑞股份有限公司

CEU85A3

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■25V,80A,RDS(ON)=6mΩ@VGS=10V. RDS(ON)=9mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

详细参数

  • 型号:

    CEP85A3

  • 制造商:

    CET

  • 制造商全称:

    Chino-Excel Technology

  • 功能描述:

    N-Channel Enhancement Mode Field Effect Transistor

供应商型号品牌批号封装库存备注价格
SR
23+
TO-220
5000
原装正品,假一罚十
询价
CET/华瑞
19+
TO-220
67773
原厂代理渠道,每一颗芯片都可追溯原厂;
询价
CET/華瑞
23+
TO-220
50000
全新原装正品现货,支持订货
询价
CET/華瑞
2022+
TO-220
2000
原厂代理 终端免费提供样品
询价
C
23+
P-TO220-3-1
6000
原装正品,支持实单
询价
CET华瑞
20+
TO-220
30
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
CET
23+
TO-220
28000
原装正品
询价
CET
TO-220
50000
一级代理 原装正品假一罚十价格优势长期供货
询价
CET
23+
TO-220
12800
公司只有原装 欢迎来电咨询。
询价
CET/華瑞
24+
NA/
5250
原装现货,当天可交货,原型号开票
询价
更多CEP85A3供应商 更新时间2025-5-19 15:36:00