N-Channel Enhancement Mode Field Effect Transistor

Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package & TO-220F full-pak for through hole. Lead free product is acquired.

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CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

CET

华瑞

RF POWER TRANSISTORS Ldmos Enhanced Technology

DESCRIPTION The LET9060C is an N-Channel enhancement-mode lateral Field-Effect RF power transistor, designed for high gain broadband, commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1.0 GHz. LET9060C boasts the excellent gain, linearity and r

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STMICROELECTRONICS

意法半导体

RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package

Description The LET9060 is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET. It is designed for high gain, broadband, commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. LET9060 boasts the excellent gain,

文件：296.25 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

1/2 DUTY, 160-OUTPUT STATIC LCD DRIVER

GENERAL DESCRIPTION The ML9060 consists of a 320-bit shift register, a 320-bit data latch, 160 sets of LCD drivers, and a common signal generator circuit. The LCD display data is input serially to the shift register from the DATA IN pin in synchronization with the CLOCK IN signal, and is stored

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OKIOki Electric Cable Co.,Ltd

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